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Total No. of Pages : 02
Total No. of Questions : 09
B.Tech.(ECE/ETE) (E-I 2011 Onwards) (Sem.-6)
MICRO ELECTRONICS
Subject Code : BTEC-902
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M.Code: 71231
Time: 3 Hrs.
Max. Marks : 60
INSTRUCTION TO CANDIDATES :
- SECTION-A is COMPULSORY consisting of TEN questions carrying TWO marks each.
- SECTION-B contains FIVE questions carrying FIVE marks each and students have to attempt any FOUR questions.
- SECTION-C contains THREE questions carrying TEN marks each and students have to attempt any TWO questions.
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SECTION-A
- Answer briefly :
- What is the difference between PATTERNING and deposition?
- Write chemical reaction for growth of MGS.
- Draw the construction diagram for monolithic avalanche diode.
- Is it possible to fabricate inductors?
- What do you mean by plasma etching?
- Why silicon is preferred over germanium for fabrication of IC?
- Write various defects in polycrystalline silicon.
- What is the use of ficks one dimensional law?
- Write the various materials used to form gates and Interconnection.
- Write the various apparatus names in dry etching.
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SECTION-B
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- Discuss in detail about atomic diffusion mechanism.
- How can you etch away silicon, silicon dioxide, silicon nitride and aluminium?
- What is the difference between raster scan and vector scan?
- Which apparatus is used to convert poly crystal silicon into single crystal form?
- Discuss in brief about MEMS.
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SECTION-C
- Discuss various CMOS fabrication techniques.
- How zone refining process is different from silicon float zone process?
- What do you mean by ion implantation? How it is different from diffusion?
NOTE : Disclosure of Identity by writing Mobile No. or making of passing request on any page of Answer sheet will lead to UMC against the Student.
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This download link is referred from the post: PTU B.Tech 6th Semester Last 10 Years 2009-2019 Previous Question Papers|| Punjab Technical University
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