Download JNTUK M.Tech R19 ECE VLSI,VLSID, VLSI SD,VLSI And ME Syllabus

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JAWAHARLAL NEHRU TECHNOLOGICAL UNIVERSITY: KAKINADA

KAKINADA – 533 003, Andhra Pradesh, India

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DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING

COURSE STRUCTURE & SYLLABUS M.Tech ECE

VLSI, VLSI Design, VLSI System Design,

VLSI Micro-Electronic Programme

(Applicable for batches admitted from 2019-2020)

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I Semester

II Semester

*Students be encouraged to go to Industrial Training/Internship for at least 2-3 weeks during semester break.

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III Semester*

#Evaluated and Displayed in IV Semester Marks list.

*Students going for Industrial Project/Thesis will complete these courses through MOOCs

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IV Semester

Audit Course 1& 2

1. English for Research Paper Writing
2. Disaster Management
3. Sanskrit for Technical Knowledge

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4. Value Education
5. Constitution of India
6. Pedagogy Studies
7. Stress Management by Yoga
8. Personality Development through Life Enlightenment Skills

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I Year I Semester

CMOS Analog IC Design

Course objectives:

• This course focuses on theory, analysis and design of analog integrated circuits in both Bipolar and Metal-Oxide-Silicon (MOS) technologies.

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• Basic design concepts, issues and tradeoffs involved in analog IC design are explored.
• Intuitive understanding and real-life applications are emphasized throughout the course.
• To learn about Design of CMOS Op Amps, Compensation of Op Amps, Design of Two- Stage Op Amps, Power Supply Rejection Ratio of Two-Stage Op Amps, Cascade Op Amps, Measurement Techniques of OP Amp.
• To know about Characterization of Comparator, Two-Stage, Open-Loop Comparators, Improving the Performance of Open-Loop Comparators, Discrete-Time Comparators etc.

UNIT -I

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Basic MOS Device Physics – General Considerations, MOS I/V Characteristics, Second Order effects, MOS Device models. Short Channel Effects and Device Models. Single Stage Amplifiers Basic Concepts, Common Source Stage, Source Follower, Common Gate Stage, Cascode Stage.

UNIT -II:

Differential Amplifiers Single Ended and Differential Operation, Basic Differential Pair, CommonMode Response, Differential Pair with MOS loads, Gilbert Cell. Passive and Active Current Mirrors– Basic Current Mirrors, Cascode Current Mirrors, Active Current Mirrors.

UNIT -III:

Frequency Response of Amplifiers – General Considerations, Common Source Stage, SourceFollowers, Common Gate Stage, Cascode Stage, Differential Pair. Noise – Types of Noise, Representation of Noise in circuits, Noise in single stage amplifiers, Noise in Differential Pairs.

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UNIT -IV:

Feedback Amplifiers General Considerations, Feedback Topologies, Effect of Loading.OperationalAmplifiers General Considerations, One Stage Op Amps, Two Stage Op Amps, Gain Boosting,Common Mode Feedback, Input Range limitations, Slew Rate, Power Supply Rejection, Noise in Op Amps. Stability and Frequency Compensation.

UNIT -V:

Characterization of Comparator, Two-Stage, Open-Loop Comparators, Other Open-Loop Comparators, Improving the Performance of Open-Loop Comparators, Discrete-Time Comparators.

Text Books:

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1. B.Razavi, “Design of Analog CMOS Integrated Circuits”, 2nd Edition, McGraw Hill Edition2016.
2. Paul. R.Gray& Robert G. Meyer, “Analysis and Design of Analog Integrated Circuits”, Wiley, 5th Edition, 2009.

Reference Books:

1. T. C. Carusone, D. A. Johns & K. Martin, “Analog Integrated Circuit Design", 2nd Edition, Wiley, 2012.
2. P.E.Allen&D.R. Holberg, “CMOS Analog Circuit Design", 3rd Edition, Oxford University Press, 2011.

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3. R. Jacob Baker, “CMOS Circuit Design, Layout, and Simulation”, 3rd Edition, Wiley, 2010.
4. Recent literature in Analog IC Design.

Course Outcomes:

At the end of the course, students will be able to:

• Design MOSFET based analog integrated circuits.

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• Analyze analog circuits at least to the first order.
• Appreciate the trade-offs involved in analog integrated circuit design.
• Understand and appreciate the importance of noise and distortion in analog circuits.
• Analyze complex engineering problems critically in the domain of analog IC design for conducting research.
• Solve engineering problems for feasible and optimal solutions in the core area of analog ICs.

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I Year I Semester

CMOS Digital IC design

Course objectives:

• To understand the fundamental properties of digital Integrated circuits using basic MOSFET equations and to develop skills for various logic circuits using CMOS related design styles.
• The course also involves analysis of performance metrics.

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• To teach fundamentals of CMOS Digital integrated circuit design such as importance of Pseudo logic, Combinational MOS logic circuits, and Sequential MOS logic circuits.
• To teach the fundamentals of Dynamic logic circuits and basic semiconductor memories which are the basics for the design of high performance digital integrated circuits.

UNIT-I: MOS Design

Pseudo NMOS Logic – Inverter, Inverter threshold voltage, Output high voltage, Output Low voltage, Gain at gate threshold voltage, Transient response, Rise time, Fall time, Pseudo NMOS logic gates, Transistor equivalency, CMOS Inverter logic.

UNIT-II: Combinational MOS Logic Circuits:

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MOS logic circuits with NMOS loads, Primitive CMOS logic gates NOR & NAND gate, Complex Logic circuits design – Realizing Boolean expressions using NMOS gates and CMOS gates, AOI and OAI gates, CMOS full adder, CMOS transmission gates, Designing with Transmission gates.

UNIT-III: Sequential MOS Logic Circuits

Behaviour of bistable elements, SR Latch, Clocked latch and flip flop circuits, CMOS D latch and edge triggered flip-flop.

UNIT-IV: Dynamic Logic Circuits

Basic principle, Voltage Bootstrapping, Synchronous dynamic pass transistor circuits, Dynamic CMOS transmission gate logic, High performance Dynamic CMOS circuits.

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UNIT-V: Semiconductor Memories

Types, RAM array organization, DRAM – Types, Operation, Leakage currents in DRAM cell and refresh operation, SRAM operation Leakage currents in SRAM cells, Flash Memory- NOR flash and NAND flash.

Text Books:

1. Digital Integrated Circuit Design – Ken Martin, Oxford University Press, 2011.
2. CMOS Digital Integrated Circuits Analysis and Design – Sung-Mo Kang, Yusuf Leblebici,TMH, 3rd Ed., 2011.

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Reference Books:

1. Introduction to VLSI Systems: A Logic, Circuit and System Perspective – Ming-BO Lin, CRC Press, 2011
2. Digital Integrated Circuits A Design Perspective, Jan M. Rabaey, Anantha Chandrakasan Borivoje Nikolic, 2nd Ed., PHI.

Course Outcomes:

At the end of the course, students will be able to:

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• Demonstrate advanced knowledge in Static and dynamic characteristics of CMOS, Alternative CMOS Logics, Estimation of Delay and Power, Adders Design.
• Classify different semiconductor memories.
• Analyze, design and implement combinational and sequential MOS logic circuits.
• Analyze complex engineering problems critically in the domain of digital IC design for conducting research.
• Solve engineering problems for feasible and optimal solutions in the core area of digital ICs.

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I Year I Semester

VLSI Technology

(Elective I)

UNIT 1: MOS Transistors

Introduction, The Structure of MOS Transistors, The Fluid Model, The MOS Capacitor, The MOS Transistor, Modes of Operation of MOS Transistors, Electrical Characteristics of MOS Transistors, Threshold Voltage, Transistor Trans conductance gm, Figure of Merit, Body Effect, Channel-Length Modulation, MOS Transistors as a Switch, Transmission Gate

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UNIT 2: MOS Fabrication Technology

Introduction, Basic Fabrication Processes, Wafer Fabrication, Oxidation, Mask Generation, Photolithography, Diffusion, Deposition. N-MOS Fabrication Steps, CMOS Fabrication Steps, n- Well Process, p-Well Process, Twin-Tub Process, Latch-Up Problem and Its Prevention, Use of Guard Rings, Use of Trenches, Short-Channel Effects-Channel Length Modulation Effect. Drain- Induced Barrier Lowering, Channel Punch Through, Hot carrier effect, Velocity Saturation Effect

UNIT 3: Layout Design Rules

Scaling Theory, Scalable CMOS Design Rules, CMOS Process Enhancements, Transistors, Interconnects, Circuit Elements, Efficient layout Design techniques

UNIT 4: Combinational Logic Networks

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Layouts for logic networks. Delay through networks. Power optimization.Switch logic networks. Combinational logic testing

UNIT 5: Sequential Systems

Memory cells and Arrays, clocking disciplines, sequential circuit Design, Performance Analysis, Power optimization, Design validation and testing.

Text Books:

1. Principals of CMOS VLSI Design-N.H.EWeste, K. Eshraghian, 2nd Edition, Addison Wesley.

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2. CMOS Digital Integrated Circuits Analysis and Design – Sung-Mo Kang, Yusuf Leblebici, TMH, 3rd Ed., 2011.
3. Low-Power VLSI Circuits and Systems,Ajit Pal, SPRINGER PUBLISHERS
4. Modern VLSI Design – Wayne Wolf, 3rd Ed., 1997, Pearson Education.

Reference Books:

1. Digital Integrated Circuit Design – Ken Martin, Oxford University Press, 2011.

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2. Digital Integrated Circuits – A Design Perspective, Jan M. Rabaey, AnanthaChandrakasan, Borivoje Nikolic, 2nd Ed., PHI.

Course outcomes

At the end of the course the student able to

• Understand the basics of MOS transistors and also the characteristics of MOS transistors.
• Learn about the MOS fabrication process and short channel effects.

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• Learn about the basic rules in layout designing.
• Analyse various combinational logic networks and sequential systems.

I Year I Semester

NANOMATERIALS AND NANOTECHNOLOGY

(Elective I)

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UNIT I

Introduction of nano materials and nanotechnologies, Features of nanostructures, Applications of nano materials and technologies. Nano dimensional Materials 0D, 1D, 2D structures – Size Effects – Fraction of Surface Atoms –Specific Surface Energy and Surface Stress – Effect on the Lattice Parameter Phonon Density of States the General Methods available for the Synthesis of Nanostructures – precipitate – reactive- hydrothermal/solvo thermal methods – suitability of such methods for scaling – potential Uses.

UNIT II

Fundamentals of nano materials, Classification, Zero-dimensional nano materials, One-dimensional nano materials, Two-dimensional nano materials, Three dimensional nano materials. Low- Dimensional Nano materials and its Applications, Synthesis, Properties, and Applications of Low- Dimensional Carbon-Related Nano materials.

UNIT III

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Micro- and Nanolithography Techniques, Emerging Applications Introduction to Micro electro mechanical Systems (MEMS), Advantages and Challenges of MEMS, Fabrication Technologies, Surface Micromachining, Bulk Micromachining, Molding. Introduction to Nano Phonics.

UNIT IV

Introduction, Synthesis of CNTs Arc-discharge, Laser-ablation, Catalytic growth, Growth mechanisms of CNT’s - Multi-walled nano tubes, Single-walled nano tubes Optical properties of CNT's, Electrical transport in perfect nano tubes, Applications as case studies. Synthesis and Applications of CNT's.

UNIT V

Ferroelectric materials, coating, molecular electronics and nano electronics, biological and environmental, membrane based application, polymer based application.

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Text Books:

1. Kenneth J. Klabunde and Ryan M. Richards, “Nanoscale Materials in Chemistry”, 2nd edition, John Wiley and Sons, 2009.
2. I Gusev and A ARempel, “Nanocrystalline Materials”, Cambridge International Science Publishing, 1st Indian edition by Viva Books Pvt. Ltd. 2008.
3. B. S. Murty, P. Shankar, Baldev Raj, B. B. Rath, James Murday, “Nanoscience and Nanotechnology”, Tata McGraw Hill Education 2012.

Reference Books:

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1. Bharat Bhushan, “Springer Handbook of Nanotechnology", Springer, 3rd edition, 2010.
2. Kamal K. Kar, “Carbon Nanotubes: Synthesis, Characterization and Applications", Research Publishing Services; 1 st edition, 2011, ISBN-13: 978-9810863975.

Course Outcomes:

At the end of the course, students will be able to:

• To understand the basic science behind the design and fabrication of nano scale systems.

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• To understand and formulate new engineering solutions for current problems and competing technologies for future applications.
• To be able make inter disciplinary projects applicable to wide areas by clearing and fixing the boundaries in system development.
• To gather detailed knowledge of the operation of fabrication and characterization devices to achieve precisely designed systems

I Year I Semester

MEMS Technology

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(Elective I)

UNIT-I: Introduction to MEMS

Introduction to MEMS & Real world Sensor/Actuator examples (DMD, Air-bag, pressure sensors). MEMS Sensors in Internet of Things (IoT), Bio-Medical Applications

UNIT-II: MEMS Materials and Their Properties

Materials (eg. Si, SiO2, SiN, Cr, Au, Ti, SU8, PMMA, Pt); Important properties: Young modulus, Poisson's ratio, density, piezo-resistive coefficients, TCR, Thermal Conductivity, Material Structure. Understanding Selection of materials based on applications.

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UNIT-III: MEMS Fab Processes – 1

Understanding MEMS Processes & Process parameters for: Cleaning, Growth &Deposition, Ion Implantation & Diffusion, Annealing, Lithography. Understanding selection of Fab processes based on Applications.

UNIT-IV: MEMS Fab Processes - 2

Understanding MEMS Processes & Process parameters for: Wet & Dry etching, Bulk& Surface Micromachining, Die, Wire & Wafer Bonding, Dicing, Packaging. Understanding selection of Fab processes based on Applications

UNIT-V: MEMS Devices

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Architecture, working and basic quantitative behaviour of Cantilevers, Micro heaters, Accelerometers, Pressure Sensors, Micro mirrors in DMD, Inkjet printer-head. Understanding steps involved in Fabricating above devices

Text Books:

1. An Introduction to Micro electromechanical Systems Engineering; 2nd Ed - by N.Maluf, K Williams; Publisher: Artech House Inc
2. Practical MEMS - by Ville Kaajakari; Publisher: Small Gear Publishing
3. Micro system Design - by S. Senturia; Publisher: Springer

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Reference Books:

1. Analysis and Design Principles of MEMS Devices - MinhangBao; Publisher:Elsevier Science.
2. Fundamentals of Micro fabrication - by M. Madou; Publisher: CRC Press; 2 edition
3. Micro Electro Mechanical System Design - by J. Allen; Publisher: CRC Press
4. Micro machined Transducers Sourcebook - by G. Kovacs; Publisher: McGraw-Hill

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Course Outcomes:

At the end of the course, students will be able to:

• To understand the basic concepts of MEMS technology and working of MEMS devices.
• To understand and selecting different materials for current MEMS devices and competing Technologies for future applications
• To understanding the concepts of fabrication process of MEMS, Design and Packaging Methodology.

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• To analyze the various fabrication techniques in the manufacturing of MEMS Devices.

I Year I Semester

Device Modelling

(Elective II)

UNIT I

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2-terminal MOS device: threshold voltage modelling (ideal case as well as considering the effects of Qf, Oms and Dit.).

UNIT II

C-V characteristics (ideal case as well as taking into account the effects of Qf, Oms and Dit);MOS capacitor as a diagnostic tool ( measurement of non-uniform doping profile, estimation of Qf, Oms and Dit)

UNIT III

4-terminal MOSFET: threshold voltage (considering the substrate bias); above threshold I-V modelling (SPICE level 1,2,3 and 4).

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UNIT IV

Sub threshold current model; scaling; effect of threshold tailoring implant (analytical modelling of threshold voltage using box approximation); buried channel MOSFET. Short channel, DIBL and narrow width effects; small signal analysis of MOSFETS (Meyer'smodel)

UNIT V

SOI MOSFET: basic structure; threshold voltage modelling Advanced topics: hot carriers in channel; EEPROMs; CCDs; high-K gate dielectrics.

Text Books:

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1. D.G.Ong, “Modern MOS Technology: Processes, Devices and Design”, McGraw Hill,1984.
2. Y.Taur and T.H.Ning, “Fundamentals of modern VLSI Devices” Cambridge Univ. Press,1998.
3. S.M.Sze, “Physics of Semiconductor Devices” Wiley,1981.

Course Outcomes:

At the end of the course, students will be able to:

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• To understand the physics of 2-terminal MOSoperation and its characteristics
• To understand the physics of 4-terminal MOSFEToperation and its characteristics
• To analyze the SOI MOSFET electrical characteristics

I Year I Semester

Nano-electronics

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(Elective II)

UNIT I

Properties of Individual Nanoparticles: Introduction, Metal Nano Clusters, Semiconducting Nanoparticles, Rare Gas and Molecular Clusters, Methods of Synthesis.

UNIT II

The nanoscale MOSFET, FinFETs, Vertical MOSFETs, limits to scaling, system integration limits (interconnect issues etc.), Resonant Tunnelling Transistors. Carbon NanoStructures: Introduction, Carbon Molecules, Carbon Clusters, Carbon Nano Tubes, Application of Carbon Nanotubes.

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UNIT III

Carbon Nanotubes for Data Processing – Introduction, Electronic Properties, Synthesis of Carbon Nanotubes, Carbon Nanotube Interconnects, Carbon Nanotubes Field Effect Transistors (CNTFETs), Nanotubes for Memory Applications, Prospects of an All-CNT Nanoelectronics. Neuroelectronic Interfacing: Semiconductor Chips with Ion Channels, Nerve Cells, and Brain: Introduction, Iono-Electronic Interface, Neuron-Silicon Circuits, Brain-Silicon Chips.

UNIT IV

Optical 3-D Time-of-Flight Imaging System: Introduction, Taxonomy of Optical 3-D Techniques, CMOS Imaging, CMOS 3-D Time-of-Flight Image Sensor, Application Examples Pyroelectric Detector Arrays for IR Imaging: Introduction, Operation Principle of Pyroelectric IR Detectors, Pyroelectric Materials, Realized Devices, Characterization, and Processing Issues

UNIT V

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Electronic Noses: Introduction, Operating Principles of Gas Sensor Elements, Electronic Noses, Signal Evaluation, Dedicated Examples. 2-D Tactile Sensors and Tactile Sensor Arrays: Introduction, Definitions and Classifications, Resistive Touch screens, Ultrasonic Touch screens, Robot Tactile Sensors, Fingerprint Sensors

Text Books:

1. Introduction to Nanotechnology, C.P. Poole Jr., F.J. Owens, Wiley (2003),
2. Nano electronics and Information Technology (Advanced Electronic Materials and Novel Devices), WaserRanier,Wiley-VCH,2003

Reference Books:

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1. Nanosystems, K.E. Drexler,Wiley (1992).
2. The Physics of Low-Dimensional Semiconductors, John H. Davies, “Cambridge University Press, "1998

Course Outcomes:

At the end of the course, students will be able to:

• To understand and challenges due to scaling on CMOS devices

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• To analyze and explain working of novel MOS based silicon devices and various multi gate devices.
• To understand working of spin electronic devices
• To understand nanoelectronic systems and building blocks such as: low dimensional semiconductors, heterostructures, carbon nanotubes, quantum dots, nano wires etc.

I Year I Semester

PHOTONICS

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(Elective II)

UNIT - I: Laser systems

General description, Laser structure, Single mode laser theory, Excitation mechanism andworking of: CO2, Nitrogen, Argon ion, Excimer, X-ray, Free-electron, Dye, Nd:YAG,Alexanderite and Ti:sapphire lasers, Diode pumped solid state laser, Optical parametricoscillator (OPO) lasers. Optical amplifiers- Semiconductor optical amplifiers, Erbium dopedwaveguide optical amplifiers, Raman amplifiers, Fiber Lasers. Laser Applications-Lasers inIsotope separation, Laser interferometry and speckle metrology, Velocity measurements.

UNIT - II: Properties of laser Radiation

Introduction, Laser linewidth, Laser frequency stabilization, Beam divergence, Beamcoherence, Brightness, Focusing properties of laser radiation, Q-switching, Methods of Q- switching:Rotating- mirror method, Electro-optic Q-switching, Acoustic-optic Q-switching and Passive Q-switching, Mode locking, Methods of mode locking: Active and passive modelocking techniques, Frequency doubling and Phase conjugation

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UNIT - III: Opto-electronic Devices -I

Introduction, P-N junction diode, Carrier recombination and diffusion in P-N junction,Injection efficiency, Internal quantum efficiency, Hetero-junction, Double hetero-junction,Quantum well, Quantum dot and Super lattices; LED materials, Device structure configuration andefficiency.

UNIT - IV: Opto-electronic Devices -II

Light extraction from LEDs, LED

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