Download DBATU B-Tech 1st Year 2018 May Basic Electronic Engineering 2 Question Paper

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DR. BABASAHEB AMBEDKAR TECHNOLOGICAL UNIVERSITY, LONERE - RAIGAD - 402 103

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Summer Semester Examination, May 2018

Branch: B. Tech. Semester: II

Subject with Subject Code: Basic Electronics Engineering [EXE205] Marks: 60

Date: 23 /05 /2018 Time: 3 Hrs

Instructions to the Students:

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1. Each question carries 12 marks.
2. Attempt any five questions of the following.
3. Illustrate your answers with neat sketches, diagrams etc., wherever necessary.
4. If some part or parameter is noticed to be missing, you may appropriately assume it and should mention it clearly.
5. Use of non-programmable calculators is allowed.

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Q.1. A] Describe essential features of the following bonds:

B] Explain the classification of materials with material Science point of view. 04

C] Differentiate between n-type and p-type semiconductors. 04

Q.2. A] Discuss the concept of Hole. 04

B] The resistivity of Cu is 1.72 x 10^-8 ohm-m. Calculate the mobility of electrons in Cu Given that the number of electrons per unit volume is 10²⁸/ m³. 04

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C] Fermi energy for silver is 5.5 eV. Find out the energy for which the probability of occupancy at 300 K is 0.9. 04

Q.3. Attempt any two of the followings

A] Explain the static and dynamic resistance of a p-n junction diode. 04

B] Explain the working principle of a voltage doubler circuit. 04

C] If V_m is 10 V and V_dc is 300 V. Find ripple factor (% ripple). 04

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Q.4. A] Distinguish between avalanche and zener mechanism. 06

B] Explain the concept of base-width modulation. 06

Q.5. A] Design a fixed bias circuit with R_B using silicon transistor having h_FE =100, V_CC is 12 V and dc bias conditions are V_CE = 6V, I_C = 3mA. V_BE =0.7V. 06

B] Discuss the procedure of testing a transistor when its unknown. 04

Attempt any two of the following 06

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H measured at 06

00pF. Find the 1

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Note

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