Download GTU BE/B.Tech 2019 Summer 3rd Sem New 2132404 Principles Of Power Electronics Question Paper

Download GTU (Gujarat Technological University) BE/BTech (Bachelor of Engineering / Bachelor of Technology) 2019 Summer 3rd Sem New 2132404 Principles Of Power Electronics Previous Question Paper

1
Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER ?III (NEW) EXAMINATION ? SUMMER 2019
Subject Code: 2132404 Date: 15/06/2019

Subject Name: Principles of Power Electronics

Time: 02:30 PM TO 05:00 PM Total Marks: 70

Instructions:

1. Attempt all questions.

2. Make suitable assumptions wherever necessary.

3. Figures to the right indicate full marks.

MARKS

Q.1
(a)
Explain the need of electrical power processing. 03

(b) Compare Linear Electronics and Power Electronics and state the main
difference between a semiconductor and power semiconductor switch.
04

(c) Explain the characteristics of ideal switch. List and explain losses in a
practical switch.
07
Q.2
(a)
Draw the V-I characteristics of a diode. 03

(b) State the applications of following diodes (At least 2):
1) LED 2) Photo Diode 3) Zener Diode 4) Schottky Diode
04

(c) Draw and explain the construction of a power diode. How is it different from
signal diode?
07


OR

(c) Draw and explain input and output characteristics of BJT in CE
configuartion.
07
Q.3
(a)
What are h-parameters? What is their significance? 03

(b)
Explain transistor as a switch. 04

(c)
Explain CB configuration of transistor. 07


OR
Q.3
(a)
Explain the ?Field Effect? in MOSFET. What is its main advantage? 03

(b)
Explain Class-C commutation circuit for thyristor. 04

(c)
Draw and explain the V-I characteristics of power MOSFET. 07

Q.4

(a)

Draw symbols of: TRIAC, SCR, MOSFET, GTO, BJT, UJT.

03

(b)
Explain DIAC based firing scheme for TRIAC. State one application. 04

(c)
Compare MOSFET, BJT, SCR, Diode. 07


OR
Q.4
(a)
List only, various types of thyristors (any six) with their full names. 03

(b)
Draw and explain UJT firing scheme for SCR. 04

(c)
Explain two transistor model of SCR. 07
Q.5
(a)
Draw a neat diagram showing the V-I characteristics of SCR. 03

(b)
What are the different ways to turn-on SCR? Explain each in brief. 04

(c)
Draw and explain the construction of power MOSFET. 07


OR
Q.5
(a)
Explain Power Darlington circuit. 03

(b)
Draw the construction of power BJT. How it is different from BJT? 04

(c) Explain paralleling of power MOSFETs. List and explain in brief, the main
issues arising in this process.
07
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