Download GTU BE/B.Tech 2019 Summer 3rd Sem Old 131101 Basic Electronics Question Paper

Download GTU (Gujarat Technological University) BE/BTech (Bachelor of Engineering / Bachelor of Technology) 2019 Summer 3rd Sem Old 131101 Basic Electronics Previous Question Paper

1
Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER ? III(OLD) EXAMINATION ? SUMMER 2019
Subject Code: 131101 Date:07/06/2019

Subject Name: Basic Electronics

Time: 02:30 PM TO 05:00 PM Total Marks: 70

Instructions:

1. Attempt all questions.

2. Make suitable assumptions wherever necessary.

3. Figures to the right indicate full marks.

Q.1 (a) Draw the circuit diagram of full wave bridge rectifier and draw its input
and output waveforms. Also derive the expression for the D.C. current.
07
(b) Explain Hall effect. Derive expression of Hall voltage and state its applications. 07

Q.2 (a) State the role of voltage regulators in power supplies? Discuss working
of a series voltage regulator.
07
(b) How does the designer minimize the percentage variation in IC , due to
Variation in ICO and VBE and due to variation in ? in transistor amplifier circuit.
07
OR
(b) Prove that current density is proportional to product of charge density, mobility
of charge and electric field intensity.
07

Q.3 (a) Draw the circuit of CE configuration of transistor. Explain Input and output
characteristics. Also derive ? = ? / ?+1
07
(b) Explain the h-parameter model of CE amplifier with Bypass resistor R E and
derive the expression for Ai , Av , Ri , Ro
07
OR
Q.3 (a) What is biasing? Why biasing is required for transistor? List biasing methods
for transistor. Draw and explain the circuit of voltage divider biasing
07
(b) Draw circuit of an idealized class-B push-pull power amplifier and explain its
operation with the help of necessary waveforms.
07

Q.4 (a) Explain the different types of clipping circuits. 07
(b) Explain DC load line and Q-point for any transistor configuration. Also state
the necessity of biasing.
07
OR
Q.4 (a) Explain the principle of operation of JFET. Also compare FET with BJT. 07
(b) Explain with the help of circuit diagram the working of Tunnel Diode in detail. 07

Q.5 (a) State the limitations of Rutherford model and explain Bohr atomic model. 07
(b) Briefly discuss the term mobility in connection to charged carriers and derive
equation for point form of Ohm?s law.
07
OR

Q.5 (a) Explain in detail the base-width modulation or ?early effect? for common-base
configured transistor and draw its output and input characteristics.
07
(b) Define and prove the Miller?s theorem and its dual alternative 07

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