Download GTU BE/B.Tech 2018 Winter 3rd Sem Old 131101 Basic Electronics Question Paper

Download GTU (Gujarat Technological University) BE/BTech (Bachelor of Engineering / Bachelor of Technology) 2018 Winter 3rd Sem Old 131101 Basic Electronics Previous Question Paper

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1
Seat No.: ________ Enrolment No.___________

GUJARAT TECHNOLOGICAL UNIVERSITY

BE - SEMESTER ?III (OLD) EXAMINATION ? WINTER 2018
Subject Code:131101 Date:01/12/2018

Subject Name:Basic Electronics

Time:10:30 AM TO 01:00 PM Total Marks: 70

Instructions:

1. Attempt all questions.

2. Make suitable assumptions wherever necessary.

3. Figures to the right indicate full marks.

Q.1 (a) Draw the circuit diagram of full wave bridge rectifier and draw its input and output
waveforms. Also state the equation for D.C. load current.
07
(b) Define electron volt. Also explain the energy band diagram for insulator,
semiconductor, and metal.
07

Q.2 (a) Describe the diode?s static and dynamic resistances. Also draw diode V-I
characteristics.
07
(b) Explain i) Zener diode and ii) Photodiode. 07
OR
(b) A metal piece of circular cross-section has a resistance per unit length equal to 3.6
x 10
-4
?/cm. The cross-sectional area is 1 mm
2
and the concentration of free
electrons is 9 x 10
26
/ m
3
.If the current density is 3 x 10
6
A/m
2
,calculate the
following :
(a) Current (b) Mobility (c) Conductivity (d) Velocity of free electrons.
07

Q.3 (a) Draw CE transistor configuration and give its input and output characteristics.
Also derive the relation between current gain of CE, CB and CC configurations.
07
(b) Explain NPN transistor with symbol, structure and operation. 07
OR
Q.3 (a) Explain working of Tunnel diode. Draw its I-V characteristic and symbol. List out
applications of Tunnel diode.
07
(b) Explain Phototransistor. 07

Q.4 (a) Explain voltage divider biasing for BJT with derivations and diagram. 07
(b) Write short note on Clippers. 07
OR
Q.4 (a) Derive the expression for small-signal voltage gain in relation to emitter follower
circuit in terms of h-parameters.
07
(b) Explain class B push-pull Power Amplifier. 07

Q.5 (a) Compare class A, class B, class C and class AB amplifiers. 07
(b) Draw a neat sketch to illustrate the structure of an N-channel E-MOSFET. Explain
its operation.
07
OR

Q.5 (a) Compare FET with BJT in terms of advantages, disadvantages, construction and
Operation
07
(b) An n-channel JFET has IDSS = 8 mA and VP = - 4 Volts.
(a) If ID = 3 mA calculate the value of VGS.
(b) Calculate V
DS (sat)
for ID = 3 mA.
07

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