GTU BE/B.Tech 2018 Winter Question Papers || Gujarat Technological University
GUJARAT TECHNOLOGICAL UNIVERSITY
BE - SEMESTER-III (OLD) EXAMINATION — WINTER 2018
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Subject Code:131101 Date:01/12/2018
Subject Name:Basic Electronics
Time:10:30 AM TO 01:00 PM Total Marks: 70
Instructions:
- Attempt all questions.
- Make suitable assumptions wherever necessary.
- Figures to the right indicate full marks.
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| Q.1 | (a) Draw the circuit diagram of full wave bridge rectifier and draw its input and output waveforms. Also state the equation for D.C. load current. | 07 |
| Q.2 | (a) Define electron volt. Also explain the energy band diagram for insulator, semiconductor, and metal. | 07 |
| Q.3 | (a) Describe the diode’s static and dynamic resistances. Also draw diode V-I characteristics. | 07 |
| OR | ||
| Q.3 | (b) Explain 1) Zener diode and ii) Photodiode. | 07 |
| Q.4 | (a) A metal piece of circular cross-section has a resistance per unit length equal to 3.6 x 10-2 O/cm. The cross-sectional area is 1 mm2 and the concentration of free electrons is 9 x 1026 / m3. If the current density is 3 x 106 A/m2 calculate the following : (a) Current (b) Mobility (c) Conductivity (d) Velocity of free electrons. | 07 |
| OR | ||
| Q.4 | (b) Draw CE transistor configuration and give its input and output characteristics. Also derive the relation between current gain of CE, CB and CC configurations. | 07 |
| Q.5 | (a) Explain NPN transistor with symbol, structure and operation. | 07 |
| OR | ||
| Q.5 | (b) Explain working of Tunnel diode. Draw its I-V characteristic and symbol. List out applications of Tunnel diode. | 07 |
| Q.6 | (a) Explain Phototransistor. | 07 |
| OR | ||
| Q.6 | (b) Explain voltage divider biasing for BJT with derivations and diagram. | 07 |
| Q.7 | (a) Write short note on Clippers. | 07 |
| OR | ||
| Q.7 | (b) Derive the expression for small-signal voltage gain in relation to emitter follower circuit in terms of h-parameters. | 07 |
| Q.8 | (a) Explain class-B push-pull Power Amplifier. | 07 |
| OR | ||
| Q.8 | (b) Compare class A, class B, class C and class AB amplifiers. | 07 |
| Q.9 | (a) Draw a neat sketch to illustrate the structure of an N-channel E-MOSFET. Explain its operation. | 07 |
| OR | ||
| Q.9 | (b) Compare FET with BJT in terms of advantages, disadvantages, construction and Operation | 07 |
| Q.10 | (a) An n-channel JFET has IDSS = 8 mA and Vp = - 4 Volts. (a) If ID = 3 mA calculate the value of VGS. --- Content provided by FirstRanker.com --- (b) Calculate VDS (sat) for ID = 3 mA. | 07 |
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