Download OU B-Tech First Year 2011 June 3314 Engineering Physics Question Paper

Download OU (Osmania University) B.Tech (Bachelor of Technology) First Year (1st Year) 2011 June 3314 Engineering Physics Question Paper

Code No. : 3314/N
FACULTY OF ENGINEERING & INFORMATICS
B.E. I Year(New) (Common to all Branches) (Main) Examination, June 2011
ENGINEERING PHYSICS
Time : 3 Hours Max. Marks : 75
Note : Answer all questions
t
from Part ? A. Answer any fiVe _questions from
Part B.
PART A (Marks : 25)
1.

A soap film (n = 1.33) in air is 320 nm thick. If it is illuminated with white
light at normal incidence, what colour will it appear to be in reflected light ? 3
?.
Two Nicois have parallel 'polari4ing directions ..so that the 'intensity of
transmitted light is maximum. Through what angle must either Nicol be
turned if infensity is to drop by one-fourth of its maximum value ? 2
3. Compare and ,contrast between Bose-ginstein and Fermi-Dirac Statistics. 3
4. Calculate the value of poynting vector at the surface of the sun if the power
radiated by the sun is 3.8:x .10
26
W andits radius is 7 x 10
8
rn. 2
. The first order diffraction is found".toi'ocd_ur
-
6t a glancing angle :of
Calculate the wavelength of X-rays and the glancing angle 'for second
order diffraction if spacing between the adjacent planes is 2.51A.
? For an intrinsic semiconductor having band gap Eg 0.7 'eV, calculate the
density' of holes and electrons at room temperature (27 ?C). GiVen
K = 1.38.x 10
23
j/K and h = 6.62 x 1 04 J.
7. Draw the nature of Magnetic dipole moments and variation of susceptibility
with temperature graphs in ferro-ferri-and anti-ferromagnetic materials. 3
8. Explain the isotopic effect in superconductors. 2
9. Write few applications of nano materials. 2
10. Explain how X-diffraction is used in charactering the nano materials.
PART ? B (Marks : 50)
11. (a) Obtain an expression for the Intensity of diffraction pattern in case of
Fraunhofer diffraction at single slit, and obtain the condition for
minima of different orders.
(b) Explain the construction of quartervvave plate.
8
2
(This paper contains 2 pages) 1 ? P.T.O.
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Code No. : 3314/N
FACULTY OF ENGINEERING & INFORMATICS
B.E. I Year(New) (Common to all Branches) (Main) Examination, June 2011
ENGINEERING PHYSICS
Time : 3 Hours Max. Marks : 75
Note : Answer all questions
t
from Part ? A. Answer any fiVe _questions from
Part B.
PART A (Marks : 25)
1.

A soap film (n = 1.33) in air is 320 nm thick. If it is illuminated with white
light at normal incidence, what colour will it appear to be in reflected light ? 3
?.
Two Nicois have parallel 'polari4ing directions ..so that the 'intensity of
transmitted light is maximum. Through what angle must either Nicol be
turned if infensity is to drop by one-fourth of its maximum value ? 2
3. Compare and ,contrast between Bose-ginstein and Fermi-Dirac Statistics. 3
4. Calculate the value of poynting vector at the surface of the sun if the power
radiated by the sun is 3.8:x .10
26
W andits radius is 7 x 10
8
rn. 2
. The first order diffraction is found".toi'ocd_ur
-
6t a glancing angle :of
Calculate the wavelength of X-rays and the glancing angle 'for second
order diffraction if spacing between the adjacent planes is 2.51A.
? For an intrinsic semiconductor having band gap Eg 0.7 'eV, calculate the
density' of holes and electrons at room temperature (27 ?C). GiVen
K = 1.38.x 10
23
j/K and h = 6.62 x 1 04 J.
7. Draw the nature of Magnetic dipole moments and variation of susceptibility
with temperature graphs in ferro-ferri-and anti-ferromagnetic materials. 3
8. Explain the isotopic effect in superconductors. 2
9. Write few applications of nano materials. 2
10. Explain how X-diffraction is used in charactering the nano materials.
PART ? B (Marks : 50)
11. (a) Obtain an expression for the Intensity of diffraction pattern in case of
Fraunhofer diffraction at single slit, and obtain the condition for
minima of different orders.
(b) Explain the construction of quartervvave plate.
8
2
(This paper contains 2 pages) 1 ? P.T.O.
17; Write & note On
.(a) Concept of fermi level in semiconductors..
,0) -:,.Typq1;;anci:Type 11?0p,Orconductors.'-?
(0)
Code N 3314/N
12. (a) Discuss the properties of wavefunction, 2
(b) Using Schrodinger time independent wave equation, discuss the
nature of a particle moving across the potential barrier and define
quanturn'tunnelling. 8
13. .(a) Discuss the free electron theory of metals. 5
(b) Explain, how, Kronig-Penny model of solids lead to energy band
formation. 5
14. -(a) Explain the phenomenon of ferroeleotricity and discuss how diolectric
.constant of Barium titanate changes as its temperature is decreased. 7
b) Write few applications of ferroelectrics. 3
15. (a) What are thin films ? Describe the
Method of preparatioq of thin films.
(b)' Write a note oh olar-cellS.
chemical vapour. deposition
16. (a) Explain the construction and working .of Ruby-laser. 5
(b) -Using. Bose-EinStein distribution;`-law obtain
.
the Planck's =law of black-
body radiation. 5
2 6,100

5
5
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This post was last modified on 20 November 2019