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Subject Title: Electronic Devices Prepared by: K Haritha
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Year: | Semester : II Updated on: 22.03.
Unit - I: PN JUNCTION
- Define the terms drift current, diffusion current and junction capacitance in a PN Junction.
- Write the diode equation and explain it.
- Explain the effect of temperature on reverse saturation current.
- Explain zener diode as voltage regulator
- List the applications of PN junction diode, Tunnel diode.
- Explain the formation of depletion region. How it is affected in forward and reverse bias?
- Draw and explain the V-I characteristics of junction diode in forward and Reverse bias.
- Discuss the V-I characteristics of Zener diode. Explain avalanche and Zener breakdowns.
- Write a note on Tunnel diode.
- Explain V-I characteristics of Varactor diode.
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Unit - II: BIPOLAR JUNCTION TRANSISTOR
- Draw the symbols of PNP and NPN transistors.
- Define cut-off, active and saturation regions of a transistor.
- Draw h-parameter equivalent circuit of BJT in CE configuration.
- Explain the need for transistor biasing.
- Define Stability factor. Write its expression for CE configuration.
- Mention the advantages of self biasing.
- Write a short note on Early effect
- Explain the working of NPN transistor with neat circuit diagram.
- Explain the current components of NPN transistor
- Define the terms a, ß and ? of a transistor. Deduce the relation between them.
- Draw the characteristics of CE configuration and explain.
- Draw and explain CE configuration as two port network.
- Define h-parameters and determine them from the transistor characteristic Curves.
- Explain the selection of operating point on the DC load line with neat diagram.
- What is stability factor? Explain the “fixed bias” and “self bias” circuits.
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Unit - III: FIELD EFFECT TRANSISTOR(FET) AND UNI-JUNCTION TRANSISTOR (UJT)
- Classify different types of FETs.
- Draw the drain characteristics of JFET.
- Define trans conductance and amplification factor of FET.
- List any five applications of JFET.
- Bring out the difference between FET and BJT.
- List the applications of UJT.
- Explain the working of N-channel JFET and explain the V-I characteristics.
- Discuss the output and transfer characteristics of JFET.
- Define FET parameters and derive relationship between them.
- Explain application of FET as voltage variable resistor.
- Explain the construction and principle of operation of depletion type n-channel MOSFET.
- Explain the working of MOSFET as a switch.
- Explain the working and characteristics of a UJT.
- Describe the working of UJT as relaxation oscillator.
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Unit - IV: SILICONCONTROLLED RECTIFIER (SCR) AND PHOTOELECTRONIC DEVICES
- List the applications of SCR.
- Explain the two transistor representation of SCR
- What is LDR and mention its applications.
- Mention the various types of photovoltaic cells.
- List the applications of photodiode.
- List the applications of LED.
- Explain the working and construction of SCR and draw its V-I characteristics.
- Explain how SCR is used for power control.
- What is LDR? Mention its specifications and explain the characteristics of a LDR.
- Explain construction and working of photo voltaic cell.
- Describe the construction and characteristics of photodiodes and mention its uses.
- Explain the construction and characteristics of a phototransistor.
- Write a note on LED
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This download link is referred from the post: OU BSc Computer Science 2021 Important Question Bank || Osmania University (Important Questions)
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