Download AKTU B-Tech 8th Sem 2016-17 EEC034 Integrated Circuit Technology Question Paper

Time: 3 Hours

Roll No:

B.TECH.

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THEORY EXAMINATION (SEM–VIII) 2016-17

INTEGRATED CIRCUIT TECHNOLOGY

Max. Marks : 100

Note: Be precise in your answer. In case of numerical problem assume data wherever not provided.

SECTION – A

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1. Explain the following: 10 x 2 = 20
   1. What is diffusion?
   2. What is meant by annealing?
   3. What is Negative Photoresist?
   4. What is Auto Doping?
   5. What is Etching?

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   6. List Oxide Properties?
   7. Explain importance of Silicon Dioxide in Fabrication?
   8. Classify IC on the basis of their complexity?
   9. What is Packaging?
   10. List the advantage of Ion Implantation?

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SECTION – B

2. Attempt any five parts of the following questions: 5 x 10 = 50
   1. State and explain Fick's first law of diffusion. Derive Fick's second law from the first
   2. Define thin films. Describe a physical vapour deposition technique for film deposition what should be the required characteristics of the deposited film and how can it be achieved?
   3. Describe briefly the advantages and disadvantages of Atmospheric Pressure Chemical Vapour Deposition(APCVD). Also describe the system.

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   4. What is wet chemical etching? Name the common etchant used in integrated circuit fabrication with their composition for Si, SiO2 and Si3N4 etching
   5. What are the advantages of polysilicon gate technology over metal gate? How is it fabricated?
   6. What is sheet resistance? Describe four-point probe method for the measurement of sheet resistance.
   7. A silicon wafer is covered with a 200 nm thick layer of silicon dioxide. What is the added time required to grow an additional 100 nm of silicon dioxide in dry oxygen at 1200 °C? Given that the linear and parabolic rate constants for dry oxidation of silicon are 1.125 micrometer per hour and 0.045 micrometer square per hour respectively at 1200 °C.
   8. (i) Why is oxidation done? Explain the kinetics of oxide growth.
      

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      (ii) All modern Si MOSFETS are fabricated on (100) oriented Si substrate. Explain why?

SECTION – C

3. Attempt any two parts of the following questions: 2 x 15 = 30
   1. What is Ion-implantation? Why ion-implantation is preferred over diffusion for impurity doping? Explain briefly ion-implantation technique with a labeled sketch
   2. What are the applications of metallization? What are the various choices for it? Why silicides are used? Discuss the advantages associated with silicide technology. List the metals used in silicidation.

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   3. Explain, why sputtering is needed for the deposition of refractory materials like tantalum. With neat diagram explain the D.C. sputtering technique.

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