This download link is referred from the post: JNTUA M.Tech 1st Sem last 10 year 2010-2020 Previous Question Papers (JNTU Anantapur)
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Code: 9D06106c
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M.Tech I Semester Regular & Supplementary Examinations February 2016
LOW POWER VLSI DESIGN
(Common to DSCE & DECS)
(For students admitted in 2011, 2012, 2013, 2014 & 2015 only)
Time: 3 hours
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Max Marks: 60
Answer any FIVE questions
All questions carry equal marks
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- (a) What are the factors that make power as an important design constraint in today's VLSI design? List and explain.
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(b) What are the advantages and disadvantages of Silicon-on-insulator? - (a) Draw the cross sectional diagram of optimized twin-well BiCMOS structure and explain the process.
(b) Describe integrated digital CMOS process. - (a) What are the advantages of copper inter connects for deep submicron CMOS/BICMOS structures.
(b) Explain about low power CMOS circuit design technique. - (a) Discuss about MOSFET model parameters related to trans-conductance.
(b) What are the limitations of MOSFET models? Mention some of MOSFET model applications. - (a) Draw the circuit diagram of common emitter BiCMOS drive configuration and explain the operation with ISD - VSD characteristics.
(b) Draw the circuit diagram of two-input CMOS NOR gate and explain its operation with the help of truth table. - (a) Compare the advanced BiCMOS NAND (two input) implementations with neat circuit diagram.
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(b) Briefly explain about ESD – free BICMOS circuits. - (a) Explain about design quality measures for latches and flip flops.
(b) Draw a transmission gate based dynamic flip flop and explain its operation. - (a) Discuss about power reduction process in clock networks.
(b) Describe the power consumption in a 4-transistor SRAM cell.
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This download link is referred from the post: JNTUA M.Tech 1st Sem last 10 year 2010-2020 Previous Question Papers (JNTU Anantapur)