FirstRanker Logo

FirstRanker.com - FirstRanker's Choice is a hub of Question Papers & Study Materials for B-Tech, B.E, M-Tech, MCA, M.Sc, MBBS, BDS, MBA, B.Sc, Degree, B.Sc Nursing, B-Pharmacy, D-Pharmacy, MD, Medical, Dental, Engineering students. All services of FirstRanker.com are FREE

📱

Get the MBBS Question Bank Android App

Access previous years' papers, solved question papers, notes, and more on the go!

Install From Play Store

Download OU B.Sc 2019 June-July 2nd Semester 3040 Electronics Devices Question Paper

Download OU (Osmania University) BSc (Bachelor of Science - Maths, Electronics, Statistics, Computer Science, Biochemistry, Chemistry & Biotechnology) 2019 June-July 1st Year 2nd Semester (2nd Semester) (1-2) 3040 Electronics Devices Previous Question Paper

This post was last modified on 06 February 2020

OU B-Sc Last 10 Years 2010-2020 Question Papers || Osmania University


FirstRanker.com

FACULTY OF SCIENCE

B.Sc. II-Semester (CBCS) Examination, May / June 2019

--- Content provided by⁠ FirstRanker.com ---

Subject : Electronics

Paper - II : Electronic Devices

Time : 3 Hours Max. Marks: 80

PART - A (5 x 4 = 20 Marks)

(Short Answer Type)

--- Content provided by‍ FirstRanker.com ---

Note : Answer any FIVE of the following questions.

  1. Explain tunneling phenomenon.
  2. Explain the junction capacitance.
  3. Define a and ß of a transistor and derive the relation between them.
  4. The collector current of a transistor is 5mA. If ß=140, IB=35uA, then calculate leakage current ICEO.
  5. --- Content provided by‌ FirstRanker.com ---

  6. Explain briefly UJT as relaxation oscillation.
  7. An N-channel JFET has a pinch-off voltage of -4.5v and IDSS = 9mA. At what value of VGS in the pinch off region will ID equal to 3mA?
  8. Draw the diagram of LED and mention its applications.
  9. Mention Application of SCR.

PART - B (4 x 15 = 60 Marks)

--- Content provided by‌ FirstRanker.com ---

(Essay Answer Type)

Note: Answer ALL the questions.

  1. (a) How is P-N junction diode formed? Explain its characteristic curves and types of breakdowns.

    OR

    (b) Describe the construction and working of a varactor diode. Draw and explain its characteristics.
  2. (a) Explain the two methods of transistor biasing.

    OR

    --- Content provided by‌ FirstRanker.com ---

    (b) Define h-parameters for a low frequency CE transistor. Give an equivalent h-parameter model for a BJT under CE configuration.
  3. (a) Explain the construction and working of UJT. Explain its characteristics.

    OR

    (b) Explain the construction and working of UJT. Explain its characteristics.
  4. (a) Draw a half-wave SCR circuit and explain its operation. Indicate the current and voltage waveform of the SCR.

    OR

    (b) Explain the construction and operation of a photovoltaic cell. Mention its applications.
  5. --- Content provided by‍ FirstRanker.com ---



This download link is referred from the post: OU B-Sc Last 10 Years 2010-2020 Question Papers || Osmania University

--- Content provided by‌ FirstRanker.com ---