FACULTY OF SCIENCE
B.Sc. II-Semester (CBCS) Examination, May / June 2019
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Subject : Electronics
Paper - II : Electronic Devices
Time : 3 Hours Max. Marks: 80
PART - A (5 x 4 = 20 Marks)
(Short Answer Type)
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Note : Answer any FIVE of the following questions.
- Explain tunneling phenomenon.
- Explain the junction capacitance.
- Define a and ß of a transistor and derive the relation between them.
- The collector current of a transistor is 5mA. If ß=140, IB=35uA, then calculate leakage current ICEO.
- Explain briefly UJT as relaxation oscillation.
- An N-channel JFET has a pinch-off voltage of -4.5v and IDSS = 9mA. At what value of VGS in the pinch off region will ID equal to 3mA?
- Draw the diagram of LED and mention its applications.
- Mention Application of SCR.
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PART - B (4 x 15 = 60 Marks)
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(Essay Answer Type)
Note: Answer ALL the questions.
- (a) How is P-N junction diode formed? Explain its characteristic curves and types of breakdowns.
OR
(b) Describe the construction and working of a varactor diode. Draw and explain its characteristics. - (a) Explain the two methods of transistor biasing.
OR
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(b) Define h-parameters for a low frequency CE transistor. Give an equivalent h-parameter model for a BJT under CE configuration. - (a) Explain the construction and working of UJT. Explain its characteristics.
OR
(b) Explain the construction and working of UJT. Explain its characteristics. - (a) Draw a half-wave SCR circuit and explain its operation. Indicate the current and voltage waveform of the SCR.
OR
(b) Explain the construction and operation of a photovoltaic cell. Mention its applications.
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