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Total No. of Pages : 02
Total No. of Questions : 8
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M.Tech. (ECE) (2018 Batch) (Sem.-2)
NANO ELECTRONICS
Subject Code : MTEC-PE4A-18
M.Code : 76265
Time: 3 Hrs.
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Max. Marks : 60
INSTRUCTIONS TO CANDIDATES :
- Attempt any FIVE questions out of EIGHT questions.
- Each question carries TWELVE marks.
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- Explain the phenomenon of formation of energy- bands.
- Explain top down and bottom up approaches.
- How energy discreetness occur in nano materials?
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- When a semiconductor material can be treated as a bulk, quantum well, quantum wire, quantum dot or nano- particle? Discuss in terms of density of states, electronic properties, optical properties. energy level structures.
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- Define any two characteristic lengths associated with nano-electronic devices.
- Draw the energy vs. wave vector diagram for a parabolic quantum well and list the features.
- MODFETs are High Electron Mobility Transistors. Justify.
- List the merits of AFM over STM.
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- Derive the expression for density of states function of a 2D semiconductor nano structure.
- Compare and contrast the features of square, triangular and parabolic quantum wells.
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- DC sputtering cannot be used for the coating of non-conducting materials. Justify.
- Illustrate the working principle of Atomic Force Microscope.
- Explain the principle, construction and working of :
- Scanning electron microscopy
- Infrared and Raman spectroscopy
- Explain photoemission process and X-RD spectroscopy in detail. Also, discuss its limitations.
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- Explain quantum interference transistor.
- Explain basic operation of DNA and DNA computer.
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NOTE : Disclosure of Identity by writing Mobile No. or Making of passing request on any page of Answer Sheet will lead to UMC against the Student.
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