Download DBATU B-Tech 1st Year 2017 Dec Basic Electronics Engineering Question Paper

Download DBATU (Dr. Babasaheb Ambedkar Technological University) B.Tech First Year 2017 Dec Basic Electronics Engineering Question Paper

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DR. BABASAHEB AMBEDKAR TECHNOLOGICAL UNIVERSITY
LONERE? RAIGAD- 402 103
End Semester Examination, December 2017
Branch: B.Tech. ' i ?1 \ Semesterzl
Subject with Subject Code: Basic Electrqn?ies Engineering Marks: 60 ?
(EXE105) : ? . ,, ,
Date: 20 / 12/2017 . , . -. . * ? Time: 3 Hrs.
Instructions:-
1 Attempt any Five questions. ? u
2 All questions carry equal markS. ' ' * /
3 Illustrate your answer with neat sketches diagrams etc. wherever
necessary. . = . . a v? _- .m1 1' .
4 Necessary data is given ih thS respect1? ~If Such data is
not given, it means thT? hS knowledge pf :hat component 13 a part of
examination. (22 t 1 ~ - . ,
5 If some part or ? _" noticed to miSSing, you may
appropriately aSSu e and state 't clearly in the anSw?r- -book.
Q.1. A] Describe essential features of the following bonds: 06
i) Ionic bond
in Covakntbond
iii) Metallic bond
B] Explain the Classification of materials with electrical engineering point 06
of View.
Q.2. Attempt any two of the followings:
A] How does the Fermi level changes with increasing temperature in the 06
extrinsic semiconductors (n? type and p -type)? Sketch the energy level
diagram.
B] What is Hall effect? Calculate Hall voltage, Hall coefficient and Hall 06
angle.
C] Find the built?in voltage for a Si P-N junction with N A ZIOISC m?3 05
and ND: 10170 m*3 at room temperature with n,?= 1010C m?3.
\ Q3 A] Sketch V0 for the CiI'CLiit? ?nd the input shown in Fig. I. D is a 06
silicone diode with cut in voltage . V9: 0.6V
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3D4C090155352B84FD608E032D9D3024

B]
Q.4
10V
~10V
Fig. I
Write a note on depletion layer capacitance and diffusion capacitance.
Define transistor biasing. List and explain different transistor biasing
techniques with suitable diagram and expressions.
Q.S. Attempt any two of the followings:
A]
B]
C]
Q.6 A]
B]
Describe the working of center tap full wave rectifier with neat
diagram and waveforms. Explain: Peak inverse voltage, ripple factor
and efficiency with respect to a center tap full wave rectifier.
Explain different types of resistors in detail. What is the color code for
1K9. resistor?
Describe construction and working of a LVDT. State any two
advantages and disadvantages of LVDT.
Do as directed:
i) Obtain 2?s complement of 10111011
ii) Add (AF1.B3)H +(FFF.E)H
iii) Determine the ?oating point representation of (?142)10 using
IEEE single precision format.
Explain AND, OR, NAND, NOR, Ex?OR, Ex-NOR logic gates with
their logic diagram and truth table.
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