GTU BE 2019 Summer Question Papers || Gujarat Technological University
Subject Code: 2132404
GUJARAT TECHNOLOGICAL UNIVERSITY
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BE - SEMESTER-III (NEW) EXAMINATION — SUMMER 2019
Subject Name: Principles of Power Electronics
Time: 02:30 PM TO 05:00 PM
Instructions:
- Attempt all questions.
- Make suitable assumptions wherever necessary.
- Figures to the right indicate full marks.
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| Q.No. | Question | Marks |
|---|---|---|
| Q.1 (a) | Explain the need of electrical power processing. | 03 |
| Q.1 (b) | Compare Linear Electronics and Power Electronics and state the main difference between a semiconductor and power semiconductor switch. | 04 |
| Q.1 (c) | Explain the characteristics of ideal switch. List and explain losses in a practical switch. | 07 |
| Q.2 (a) | Draw the V-I characteristics of a diode. | 03 |
| Q.2 (b) | State the applications of following diodes (At least 2): 1) LED 2) Photo Diode 3) Zener Diode 4) Schottky Diode | 04 |
| Q.2 (c) | Draw and explain the construction of a power diode. How is it different from signal diode? | 07 |
| OR | ||
| Q.3 (a) | Draw and explain input and output characteristics of BJT in CE configuartion. | 07 |
| Q.3 (b) | What are h-parameters? What is their significance? | 03 |
| Q.3 (c) | Explain transistor as a switch. | 04 |
| Q.4 (a) | Explain CB configuration of transistor. | 07 |
| OR | ||
| Q.4 (b) | Explain the “Field Effect” in MOSFET: What is its main advantage? | 03 |
| Q.4 (c) | Explain Class-C commutation circuit for thyristor. | 04 |
| Q.5 (a) | Draw and explain the V-I characteristics of power MOSFET. | 07 |
| Q.5 (b) | Draw symbols of: TRIAC; SCR, MOSFET, GTO, BJT, UJT. | 03 |
| Q.5 (c) | Explain DIAC based firing scheme for TRIAC. State one application. | 04 |
| OR | ||
| Q.6 (a) | Compare MOSFET; BJT, SCR, Diode. | 07 |
| Q.6 (b) | List only, various types of thyristors (any six) with their full names. | 03 |
| Q.6 (c) | Draw and explain UJT firing scheme for SCR. | 04 |
| Q.7 (a) | Explain two transistor model of SCR. | 07 |
| Q.7 (b) | Draw a neat diagram showing the V-I characteristics of SCR. | 03 |
| Q.7 (c) | What are the different ways to turn-on SCR? Explain each in brief. | 04 |
| Q.8 (a) | Draw and explain the construction of power MOSFET. | 07 |
| OR | ||
| Q.8 (b) | Explain Power Darlington circuit. | 03 |
| Q.8 (c) | Draw the construction of power BJT. How it is different from BJT? | 04 |
| Q.9 (a) | Explain paralleling of power MOSFETs. List and explain in brief, the main issues arising in this process. | 07 |
Date: 15/06/2019
Total Marks: 70
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