GUJARAT TECHNOLOGICAL UNIVERSITY
BE - SEMESTER-VII(NEW) EXAMINATION - SUMMER 2019
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Subject Code:2183901 Date:15/05/2019Subject Name:Nanolithography
Time:10:30 AM TO 01:00 PM Total Marks: 70
Instructions:
- Attempt all questions.
- Make suitable assumptions wherever necessary.
- Figures to the right indicate full marks.
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MARKS
- (a) Define: Photoresist. 03
(b) Differentiate between Positive and Negative photoresists. 04--- Content provided by FirstRanker.com ---
(c) Explain basic process of Photolithography. 07 - (a) What is resist soft bake? 03
(b) Explain spin coating of resist. 04
(c) Explain Acid-catalyzed DUV resist 07
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(c) Explain Adhesion Promotion. 07 - (a) Write basic principle of nanoimprint lithography. 03
(b) Explain fabrication of mold for nanoimprint lithography. 04
(c) Write note on X-ray Lithography. 07
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(a) What is residual layer? 03
(b) Explain separating the mold and resists after nanoimprint. 04
(c) Write note on Nano-imprint Lithography. 07 - (a) Write basic process of XRL. 03
(b) Give differences between High Resolution and Deep XRL. 04--- Content provided by FirstRanker.com ---
(c) Write a short note on X-ray source used for XRL. 07
OR
(a) What is resist hard bake? 03
(b) Explain historical background leading to nanoimprint lithography. 04
(c) Write applications of nanoimprint lithography. 07 - (a) Define negative resist and give examples. 03
(b) Explain steps involved in preparation of resist for photolithography. 04
(c) Write note on Applications of X-ray Lithography. 07
OR
(a) Define positive resist and give examples. 03--- Content provided by FirstRanker.com ---
(b) Explain mask used for X-ray Lithography. 04
(c) Write note on Applications of Photolithography. 07
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