Download JNTUK (Jawaharlal Nehru Technological University Kakinada (JNTU kakinada)) M.Tech (ME is Master of Engineering) 2020 R19 ECE Circuit Design Electronics And Communication Model Previous Question Paper
[M19CS1104]
I M. Tech I Semester (R19) Regular Examinations
RF CIRCUIT DESIGN
ELECTRONICS AND COMMUNICATION ENGINEERING
MODEL QUESTION PAPER
TIME: 3Hrs. Max. Marks: 75 M
Answer ONE Question from EACH UNIT.
All questions carry equal marks.
*****
CO KL M
UNIT-I
1. a). Explain why skin effects are considered important for RF circuit design. 1 1 8
b). Describe briefly how passive components are realized on printed circuit
boards at RF.
1 2 7
OR
2. a). Discuss Inductors and Capacitors - Voltage and Current in RF circuits
1 2 8
b). Write short note on Tuned RF / IF Transformers.
1 2 7
UNIT-II
3. a). Compare the characteristics of coaxial line, two-wire line and a parallel
plate transmission line.
2 2 8
b). An input impedance of 25 ? of ? / 4 transformer is to be matched to a
50 ? micro strip transmission line at 500 MHz compute the length,
width and characteristic impedance of the quarter-wave parallel plate
transmission line. The thickness and relative dielectric constant of the
substrate material are given as 1 mm and 4.0 respectively. Make
assumptions if necessary.
2 1 7
OR
4. a). Define the following terms for a transmission line. i) Standing wave
ratio ii) Return loss iii) Power in dBm iv) characteristic impedance.
2 2 8
b). Derive the expression for characteristic impedance of a short circuited
transmission line.
2 2 7
UNIT-III
5. a). Describe how a tunable RF active filter can be realized. 3 3 8
b). With the help of neat diagrams describe the structure and functioning of
a HEMT.
3 4 7
OR
6. a). Write a short note on low noise, linear RF BJT operation based on its
structure?
3 3 8
b). Enumerate the importance of ?power relations? in the design of an
amplifier at high frequencies.
3 2 7
UNIT-IV
7. a). Explain how stable performance can be assured for an RF transistor
amplifier using corresponding stability circles.
4 1 8
b). Draw a neat circuit diagrams to explain how gain-bandwidth product
limitation can be overcome in an RF broadband amplifier design.
4 3 7
OR
8. a). Discuss MMIC amplifiers, 4 3 8
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5
[M19CS1104]
I M. Tech I Semester (R19) Regular Examinations
RF CIRCUIT DESIGN
ELECTRONICS AND COMMUNICATION ENGINEERING
MODEL QUESTION PAPER
TIME: 3Hrs. Max. Marks: 75 M
Answer ONE Question from EACH UNIT.
All questions carry equal marks.
*****
CO KL M
UNIT-I
1. a). Explain why skin effects are considered important for RF circuit design. 1 1 8
b). Describe briefly how passive components are realized on printed circuit
boards at RF.
1 2 7
OR
2. a). Discuss Inductors and Capacitors - Voltage and Current in RF circuits
1 2 8
b). Write short note on Tuned RF / IF Transformers.
1 2 7
UNIT-II
3. a). Compare the characteristics of coaxial line, two-wire line and a parallel
plate transmission line.
2 2 8
b). An input impedance of 25 ? of ? / 4 transformer is to be matched to a
50 ? micro strip transmission line at 500 MHz compute the length,
width and characteristic impedance of the quarter-wave parallel plate
transmission line. The thickness and relative dielectric constant of the
substrate material are given as 1 mm and 4.0 respectively. Make
assumptions if necessary.
2 1 7
OR
4. a). Define the following terms for a transmission line. i) Standing wave
ratio ii) Return loss iii) Power in dBm iv) characteristic impedance.
2 2 8
b). Derive the expression for characteristic impedance of a short circuited
transmission line.
2 2 7
UNIT-III
5. a). Describe how a tunable RF active filter can be realized. 3 3 8
b). With the help of neat diagrams describe the structure and functioning of
a HEMT.
3 4 7
OR
6. a). Write a short note on low noise, linear RF BJT operation based on its
structure?
3 3 8
b). Enumerate the importance of ?power relations? in the design of an
amplifier at high frequencies.
3 2 7
UNIT-IV
7. a). Explain how stable performance can be assured for an RF transistor
amplifier using corresponding stability circles.
4 1 8
b). Draw a neat circuit diagrams to explain how gain-bandwidth product
limitation can be overcome in an RF broadband amplifier design.
4 3 7
OR
8. a). Discuss MMIC amplifiers, 4 3 8
6
b). Explain Low noise amplifiers 4 4 7
UNIT-V
9. a). With the help of neat schematics explain how oscillators shld be
configured to obtain high frequencies of oscillation. State the principle
of operation. State the principle of operation of a dielectric resonator
oscillator.
5 5 8
b). Low phase noise oscillator design 5 5 7
OR
10. a). Image Reject and Harmonic mixers, Frequency domain considerations. 5 5 8
b). Discuss abt VCOs and Crystal Oscillators 5 5 7
CO-CRSE TCOME KL -KNOWLEDGE LEVEL M-MARKS
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This post was last modified on 28 April 2020