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[M19CS1104]
I M. Tech I Semester (R19) Regular Examinations
RF CIRCUIT DESIGN
ELECTRONICS AND COMMUNICATION ENGINEERING
MODEL QUESTION PAPER
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TIME: 3Hrs. Max. Marks: 75
Answer ONE Question from EACH UNIT.
All questions carry equal marks.
UNIT-1
- a). Explain why skin effects are considered important for RF circuit design. (8 Marks)
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b). Describe briefly how passive components are realized on printed circuit boards at RF. (7 Marks) - a). Discuss Inductors and Capacitors - Voltage and Current in RF circuits (8 Marks)
b). Write short note on Tuned RF / IF Transformers. (7 Marks)
OR
UNIT-II
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- a). Compare the characteristics of coaxial line, two-wire line and a parallel plate transmission line. (8 Marks)
b). An input impedance of 25 Q of A / 4 transformer is to be matched to a 50 Q micro strip transmission line at 500 MHz compute the length, width and characteristic impedance of the quarter-wave parallel plate transmission line. The thickness and relative dielectric constant of the substrate material are given as 1 mm and 4.0 respectively. Make assumptions if necessary. (7 Marks) - a). Define the following terms for a transmission line. i) Standing wave ratio ii) Return loss iii) Power in dBm iv) characteristic impedance. (8 Marks)
b). Derive the expression for characteristic impedance of a short circuited transmission line. (7 Marks)
OR
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UNIT-III
- a). Describe how a tunable RF active filter can be realized. (8 Marks)
b). With the help of neat diagrams describe the structure and functioning of a HEMT. (7 Marks) - a). Write a short note on low noise, linear RF BJT operation based on its structure? (8 Marks)
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b). Enumerate the importance of ‘power relations’ in the design of an amplifier at high frequencies. (7 Marks)
OR
UNIT-1V
- a). Explain how stable performance can be assured for an RF transistor amplifier using corresponding stability circles. (8 Marks)
b). Draw a neat circuit diagrams to explain how gain-bandwidth product limitation can be overcome in an RF broadband amplifier design. (7 Marks) - a). Discuss MMIC amplifiers. (8 Marks)
b). Explain Low noise amplifiers (7 Marks)
OR
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UNIT-V
- a). With the help of neat schematics explain how oscillators should be configured to obtain high frequencies of oscillation. State the principle of operation. State the principle of operation of a dielectric resonator oscillator. (8 Marks)
b). Low phase noise oscillator design (7 Marks) - a). Image Reject and Harmonic mixers, Frequency domain considerations. (8 Marks)
b). Discuss about VCOs and Crystal Oscillators (7 Marks)
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OR
CO-CRSE TCOME KL -KNOWLEDGE LEVEL M-MARKS
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This download link is referred from the post: JNTUK M.Tech R19 2020 Model Question Papers || JNTU kakinada (All Branches)
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