Download AKTU B-Tech 8th Sem 2016-17 EEC034 Integrated Circuit Technology Question Paper

Download AKTU (Dr. A.P.J. Abdul Kalam Technical University (AKTU), formerly Uttar Pradesh Technical University (UPTU) B-Tech 8th Semester (Eight Semester) 2016-17 EEC034 Integrated Circuit Technology Question Paper

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B.TECH.
THEORY EXAMINATION (SEM?VIII) 2016-17
INTEGRATED CIRCUIT TECHNOLOGY
T ime : 3 Hours Max. Marks : 100
Note .' Be precise in your answer. In case ofnumericalproblem assume data wherever not provided.
SECTION ? A
1. Explain the following: 10 x 2 = 20
(a) What is diffusion?
(b) What is meant by annealing?
(c) What is Negative Photoresist?
(d) What is Auto Doping?
(e) What is Etching?
(1) List Oxide Properties?
(g) Explain importance of Silicon Dioxide in Fabrication?
(h) Classify 1C 0n the basis of their complexity?
(i) What is Packaging?
(j) List the advantage of Ion Implantation?
SECTION ? B
2. Attempt any ?ve parts of the following questions: 5 x 10 = 50
(a) State and explain Fick?s first law of diffusion. Derive Fick?s second law from the first
(b) Define thin films. Describe a physical vapour deposition technique for film deposition
what should be the required characteristics of the deposited film and how can it be
achieved?
(c) Describe brie?y the advantages and disadvantages of Atmospheric Pressure Chemical
Vapour Deposition(APCVD). Also describe the system.
(d) What is wet chemical etching? Name the common etchant used in integrated circuit
fabrication with their composition for Si, SiO2 and Si3N4 etching
(e) What are the advantages of polysilicon gate technology over metal gate? How is it
fabricated?
(1) What is sheet resistance? Describe four?point probe method for the measurement of
sheet resistance.
(g) A silicon wafer is covered with a 200 nm thick layer of silicon dioxide. What is the
added time required to grow an additional 100 nm of silicon dioxide in dry oxygen at
1200 ?C? Given that the linear and parabolic rate constants for dry oxidation of silicon
are 1.125 micrometer per hour and 0.045 micrometer square per hour respectively at
1200 ?C.
(h) (i) Why is oxidation done? Explain the kinetics of oxide growth.
(ii) A11 modern Si MOSFETS are fabricated on (100) oriented Si substrate. Explain
Why?
SECTION ? C
Attempt any two parts of the following questions: 2 x 15 = 30
3 What is Ion?implantation? Why ion?implantation is preferred over diffusion for
impurity doping? Explain brie?y ion?implantation technique with a labeled sketch
4 What are the applications of metallization? What are the various choices for it? Why
silicides are used? Discuss the advantages associated with silicide technology. List the
metals used in silicidation.
tantalum. With neat diagram e??g??tahreklchg??ittering technique.