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Download VTU B-Tech/B.E 2019 June-July 1st And 2nd Semester 2017 Jan 2016 Dec 15ELNI5 Basic Electronics Question Paper

Download VTU ((Visvesvaraya Technological University) B.E/B-Tech 2019 July ( Bachelor of Engineering) First & Second Semester (1st Semester & 2nd Semester) 2017 Jan 2016 Dec 15ELNI5 Basic Electronics Question Paper

This post was last modified on 01 January 2020

VTU B.Tech 1st Year Last 10 Years 2011-2021 Question Papers


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15ELN15/25

First/Second Semester B.E. Degree Examination, Dec.2016/Jan.2017

Basic Electronics

Time: 3 hrs.

Max. Marks: 80

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Note: Answer FIVE full questions, choosing one full question from each module.

Module-1

  1. a. Define the following diode parameters :
    1. Knee voltage
    2. Maximum forward current
    3. Peak inverse voltage
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    5. Reverse breakdown voltage
    6. Maximum power rating.
    (05 Marks)
  2. b. With neat circuit diagram and waveform explain the working of Full wave Bridge Rectifier. (06 Marks)
  3. c. Draw common emitter circuit. Sketch input and output characteristics. Also explain operating regions by indicating them on characteristic curve. (05 Marks)
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OR

  1. a. Write a note on voltage regulator circuit. (05 Marks)
  2. b. Derive the relationship between a and ß. Also calculate the a value and ß value of a transistor if IC = 100µA and IB = 2mA. (04 Marks)
  3. c. With a neat diagram, explain the output characteristics of a transistor in common base configuration. (07 Marks)

Module-2

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  1. a. What is DC load line? Explain with neat circuit the operation of voltage divider bias circuit. (05 Marks)
  2. b. What is op-amp? List the characteristics of an ideal op-amp. (06 Marks)
  3. c. For the circuit shown in Fig Q3(c). compute i) Three transistor currents ii) Voltage drop across RC and RE. (05 Marks)

Fig Q3(b)

OR

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  1. a. Explain how op-amp can be used as i) An integrator ii) Differentiator iii) Voltage follower. (06 Marks)
  2. b. With neat circuit diagram, explain base biased method with necessary equations. (05 Marks)
  3. c. Find the output of the following op-amp circuit. (05 Marks)

Fig Q4(c)

Module-3

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  1. a. Convert (1101101)2 = ( )10 and (96)10 = ( )2. (04 Marks)
  2. b. Convert (FA876)16 = ( )8 and (237)8 = ( )16. (04 Marks)
  3. c. Design Full adder circuit. (08 Marks)

OR

  1. a. State and prove De Morgan's theorem. (05 Marks)
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  3. b. What are Universal gates? Realize AND, OR Gates using universal gates. (06 Marks)
  4. c. Subtract (19)10 from (15)10 using 1's and 2's compliment methods. (05 Marks)

Module-4

  1. a. Write a note on NOR gate latch. (05 Marks)
  2. b. Explain the working of clocked RS flip flop from NAND gates. (05 Marks)
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  4. c. Define microcontrollers. Write their important applications. (06 Marks)

OR

  1. a. Explain the architecture of 8051 micro controller. (08 Marks)
  2. b. Mention the difference between latch and Flip flop. (02 Marks)
  3. c. Write a note on interfacing of 8051 microcontroller with stepper motor. (06 Marks)
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Module-5

  1. a. Explain the block diagram of communication system. (05 Marks)
  2. b. Define Amplitude modulation. Derive mathematical expression for the same. Draw waveforms. (06 Marks)
  3. c. Explain the construction and the principle of operation of LVDT. (05 Marks)

OR

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  1. a. List the differences between Amplitude modulation and frequency modulation. (05 Marks)
  2. b. Explain frequency modulation with neat waveforms. (05 Marks)
  3. c. A carrier of 10V peak and frequency 100 kHz is amplitude modulated by a sine wave of 4V peak and frequency 1000Hz. Determine the modulation index for the modulated wave and draw the amplitude spectrum. (06 Marks)

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