Download PTU M.Tech. ECE 2nd Semester 76265 NANO ELECTRONICS Question Paper

Download PTU. I.K. Gujral Punjab Technical University (IKGPTU) M.Tech. ECE 2nd Semester 76265 NANO ELECTRONICS Question Paper.

1 | M-76265 (S35)-2805

Roll No. Total No. of Pages : 02
Total No. of Questions : 8
M.Tech. (ECE) (2018 Batch) (Sem.?2)
NANO ELECTRONICS
Subject Code : MTEC-PE4A-18
M.Code : 76265
Time : 3 Hrs. Max. Marks : 60

INSTRUCTIONS TO CANDIDATES :
1.Attempt any FIVE questions out of EIGHT questions.
2.Each question carries TWELVE marks.

1. a) Explain the phenomenon of formation of energy- bands.
b) Explain top down and bottom up approaches.
c) How energy discreetness occur in nano materials?
2. When a semiconductor material can be treated as a bulk, quantum well, quantum wire,
quantum dot or nano- particle? Discuss in terms of density of states, electronic properties,
optical properties. energy level structures.
3. a) Define any two characteristic lengths associated with nano-electronic devices.
b) Draw the energy vs. wave vector diagram for a parabolic quantum well and list the
features.
c) MODFETs are High Electron Mobility Transistors. Justify.
d) List the merits of AFM over STM.
4. a) Derive the expression for density of states function of a 2D semiconductor nano
structure.
b) Compare and contrast the features of square, triangular and parabolic quantum wells.
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1 | M-76265 (S35)-2805

Roll No. Total No. of Pages : 02
Total No. of Questions : 8
M.Tech. (ECE) (2018 Batch) (Sem.?2)
NANO ELECTRONICS
Subject Code : MTEC-PE4A-18
M.Code : 76265
Time : 3 Hrs. Max. Marks : 60

INSTRUCTIONS TO CANDIDATES :
1.Attempt any FIVE questions out of EIGHT questions.
2.Each question carries TWELVE marks.

1. a) Explain the phenomenon of formation of energy- bands.
b) Explain top down and bottom up approaches.
c) How energy discreetness occur in nano materials?
2. When a semiconductor material can be treated as a bulk, quantum well, quantum wire,
quantum dot or nano- particle? Discuss in terms of density of states, electronic properties,
optical properties. energy level structures.
3. a) Define any two characteristic lengths associated with nano-electronic devices.
b) Draw the energy vs. wave vector diagram for a parabolic quantum well and list the
features.
c) MODFETs are High Electron Mobility Transistors. Justify.
d) List the merits of AFM over STM.
4. a) Derive the expression for density of states function of a 2D semiconductor nano
structure.
b) Compare and contrast the features of square, triangular and parabolic quantum wells.
2 | M-76265 (S35)-2805

5. a) DC sputtering cannot be used for the coating of non-conducting materials. Justify.
b) Illustrate the working principle of Atomic Force Microscope.
6. Explain the principle, construction and working of :
a) Scanning electron microscopy
b) Infrared and Raman spectroscopy
7. Explain photoemission process and X-RD spectroscopy in detail. Also, discuss its
limitations.
8. a) Explain quantum interference transistor.
b) Explain basic operation of DNA and DNA computer.











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