Download AKTU B-Tech 2nd Sem 2016-17 EEC201 Electronics Engineering Question Paper

Download AKTU (Dr. A.P.J. Abdul Kalam Technical University (AKTU), formerly Uttar Pradesh Technical University (UPTU)) B-Tech 2nd Semester (Second Semester) 2016-17 EEC201 Electronics Engineering Question Paper

PrintedPagesz2 RollNo.I I I I I I I I I I I EEC201
B.TECH.
THEORY EXAMINATION (SEM?II) 2016-17
ELECTRONICS ENGINEERING
T ime : 3 Hours Max. Marks : 100
Note .' Be precise in your answer. In case ofnumericalproblem assume data wherever not provided.
SECTION ? A
1. Explain the following: 10 x 2 = 20
(a) Differentiate between N?type and P?type semiconductor.
(b) Give all the Equivalent /Appr0ximation circuits of a Diode.
(c) Find the barrier potential of a silicon diode at junction temperature of 750C and 10?C.
Assume a barrier potential of 0.7 V at an ambient temperature of 25?C.
(d) What is a Varactor Diode, give its application also.
(e) What is Schottky Diode, give its application also.
(1) Differentiate between Multi meter and CR0.
(g) Determine Bdc and ICBO, if IE = 5 mA, IC = 4.95 mA, ICEO = 200pA.
(h) Differentiate between Depletion and Enhancement type MOSFET.
(i) The Op?Amp has a Slew Rate of 10 V/usec. What is the power bandwidth for a peak
output voltage of 5 V.
(j) Define Modulation Index.
SECTION ? B
2. Attempt any ?ve of the following questions: 5 x 10 = 50
(a) (1) Draw & explain the V?I characteristic of a P?N junction diode. Also describe
the effect of temperature on the V-I characteristic of a P?N junction diode.
(ii) For a Zener Voltage regulator, determine the range of RL and IL that will
result in V0 being maintained at 10V. Given Vin = 50V, R = 1K 9, IZM =
32mA.
(b) (i) Differentiate between Clipper and Clamper circuit.
(ii) Explain the function of the circuit shown in Fig. 2b(ii). and draw the output
waveform.
(c) (1) Describe the construction of a NPN transistor. Define a and [3 with respect to
BJ T and derive the relationship between them.
(ii) Refer the information appearing in Fig. 20(ii). Determine 1C, VB, VC, IB, [3 &
VCE~
9 l R V
3H!
15 smnnr?)
Fig. 2b(ii) Fig. 20(ii)
(d) Explain the construction, working and characteristics of MOSFET.
(e) (1) Draw the circuit of a subtractor circuit using op?amp and explain its working by
obtaining output expression.

(ii) Draw the circuit of Integrator using op-amp and obtain expression for output.
(1) Describe the working of Digital Voltmeter and Digital Multi Meter giving their block
diagram.
(g) Describe the working of CR0 giving its block diagram
(h) Describe communication system with the help of its block diagram.
SECTION ? C
Attempt any two of the following questions: 2 x 15 = 30
3. (a) List up the characteristics of an Op? amp. Also give its symbol and equivalent circuit.
For a particular Op?Amp the input offset current is 10 nA while input bias current is 40
nA. Calculate the values of two input bias currents.
(b) In a full wave rectifier the load resistance is 2 K Q, rf = 400 Q. Voltage applied to each
diode is 24OSinoot. Find
(i) Peak value of current i.e. 1m (ii) DC value of current i.e Ia]c
(iii) RMS value of current i.e. Inns (iv) Efficiency
(V) Ripple Factor.
4 (a) Define the following:
(i) Slew Rate (ii) Electron Volt
(iii) Mobility (iv) Ripple Factor
(V) CMRR (Vi) Pinch Off Voltage
(Vi) T.U.F.
(b) What is modulation? Give the need of modulation. Differentiate AM & FM.
5. (a) Describe the working of voltage multiplier circuit.
(b) Describe Amplitude Modulation by obtaining its expression. A 560 watt carrier is
modulated to a depth of 75%.Calculate the total power in the modulated wave.