Download AKTU B-Tech 2nd Sem 2016-17 NEC201 Electronics Engineering Question Paper

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THEORY EXAMINATION (SEM–II) 2016-17

ELECTRONICS ENGINEERING

Note: Be precise in your answer. In case of numerical problem assume data wherever not provided.

SECTION – A

1. Explain the following: 10 x 2 = 20
   1. Differentiate between N-type and P-type semiconductor.
   2. Give all the Equivalent /Approximation circuits of a Diode.

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   3. Find the barrier potential of a silicon diode at junction temperature of 75oC and 10°C. Assume a barrier potential of 0.7 V at an ambient temperature of 25°C.
   4. What is a Varactor Diode, give its application also.
   5. What is Schottky Diode, give its application also.
   6. Differentiate between Multi meter and CRO.
   7. Determine ßde and ICBO, if IE = 5 mA, Ic = 4.95 mA, ICEO = 200µ?.

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   8. Differentiate between Depletion and Enhancement type MOSFET.
   9. The Op-Amp has a Slew Rate of 10 V/µsec. What is the power bandwidth for a peak output voltage of 5 V.
   10. Define Modulation Index.

SECTION - B

Attempt any five of the following questions: 5 x 10 = 50

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2. 1. (i) Draw & explain the V-I characteristic of a P-N junction diode. Also describe the effect of temperature on the V-I characteristic of a P-N junction diode.
      (ii) For a Zener Voltage regulator, determine the range of R1 and I that will result in Vo being maintained at 10V. Given Vin = 50V, R = 1K O, IZM = 32mA.
   2. (i) Differentiate between Clipper and Clamper circuit.
      (ii) Explain the function of the circuit shown in Fig. 2b(ii) and draw the output waveform.
   3. (i) Describe the construction of a NPN transistor. Define a and ? with respect to BJT and derive the relationship between them.
      

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      (ii) Refer the information appearing in Fig. 2c(ii). Determine Ic, VE, VC, IB, ? & VCE.

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