B.Tech II Year I Semester Examinations, December - 2018

ELECTRONIC DEVICES AND CIRCUITS

(Common to EEE, ECE, CSE, EIE, IT)

Time: 3 hours Max. Marks: 75

Note: This question paper contains two parts A and B.

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Part A is compulsory which carries 25 marks. Answer all questions in Part A. Part B consists of 5 Units. Answer any one full question from each unit. Each question carries 10 marks.

PART - A (25 Marks)

1. 1. Explain the effect of temperature on V-I characteristics of a diode. (2M)
   2. Define transition capacitance. (3M)
   3. What is Early effect? (2M)
   4. Define a and ß of a transistor. (3M)

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   5. What is meant by biasing? List different biasing methods. (2M)
   6. Why is collector-base bias more stable than fixed bias? (3M)
   7. Mention different types of FETs. (2M)
   8. What are the advantages of FET over BJT? (3M)
   9. List the advantages of negative feedback. (2M)

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   10. What is Barkhausen criterion? (3M)

PART - B (50 Marks)

(Answer any one full question from each unit)

UNIT - I

1. 1. Explain in detail about drift and diffusion currents. [5+5]
   2. Derive the expression for transition capacitance and diffusion capacitance. [5+5]

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2. 1. Explain the working principle of full wave rectifier with neat diagrams. [5+5]
   2. Determine the ripple factor of a full wave rectifier with a capacitor filter. [5+5]

UNIT - II

1. 1. Explain the input and output characteristics of a transistor in CE configuration. [5+5]

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   2. What is a load line? Explain its significance. [5+5]
2. 1. Explain the operation of a transistor as an amplifier. [5+5]
   2. What is meant by h-parameters? Explain CE h-parameter model. [5+5]

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UNIT - III

1. 1. Explain the concept of DC and AC load lines. [5+5]
   2. Derive the expression for stability factor for collector to base bias. [5+5]
2. 1. Explain thermal runaway and thermal resistance. [5+5]
   2. Explain the design considerations of a transistor bias circuit. [5+5]

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UNIT - IV

1. 1. Explain the construction and operation of depletion type N-channel MOSFET. [5+5]
   2. Explain the drain and transfer characteristics of JFET. [5+5]
2. 1. Explain common source amplifier with neat circuit diagram. [5+5]

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   2. Explain the parameters of JFET. [5+5]

UNIT - V

1. 1. Draw the block diagram of feedback amplifier and explain the different blocks. [5+5]
   2. Explain the effect of negative feedback on amplifier characteristics. [5+5]

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2. 1. Explain the principle of operation of RC phase shift oscillator using BJT. [5+5]
   2. Explain the working principle of Wien bridge oscillator with neat diagram. [5+5]

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