This download link is referred from the post: JNTUA M.Tech 1st Sem last 10 year 2010-2020 Previous Question Papers (JNTU Anantapur)
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Code: 9D06106c
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M.Tech I Semester Regular & Supplementary Examinations January/February 2017
LOW POWER VLSI DESIGN
(Common to DSCE & DECS)
Time: 3 hours
Max. Marks: 60
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Answer any FIVE questions
All questions carry equal marks
- (a) What are the various aspects to be considered in low-power VLSI design? Explain.
(b) What are the advantages and limitations of silicon-on-insulator technology? - (a) Explain the isolation requirements in Bi-CMOS process.
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(b) Describe the process for integrated/digital CMOS IC. - (a) Floating body effects may also cause the parasitic bipolar leakage current in CMOS-SOI pass gate transistor, explain?
(b) What are the future trends in Bi-CMOS process? Explain. - (a) With the help of equations, describe the level 1 and level 2 models of MOSFET.
(b) Discuss about MOSFET in a hybrid mode environment. - (a) How threshold voltage adjustments can be carried out for CMOS devices? Explain with the help of necessary equations.
(b) Give the performance evaluation of merged Bi-CMOS logic gates. How the weak points of conventional Bi-CMOS logic gates are overcome by these circuits? - (a) Explain about the functionality theme and synchronous schemes of latches and flip-flops.
(b) What are the performance measures of latches and flip flops? - (a) Discuss about CMOS floating Mining node concept.
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(b) Describe low power techniques for SRAM. - (a) Explain about comparison of advanced Bi-CMOS digital circuits.
(b) Discuss about ESD-free Bi-CMOS.
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This download link is referred from the post: JNTUA M.Tech 1st Sem last 10 year 2010-2020 Previous Question Papers (JNTU Anantapur)