Download VTU BE 2020 Jan ECE Question Paper 18 Scheme 3rd Sem 18EC33 Electronic Devices

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Third Semester B.E. Degree Examination, Dec:20

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,
19-1Jan.2020
Electronic Devices
Time: 3 hrs. Max. Marks: 100
Note: ,

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,
Inswer FIFE full questions, choosing ONE full question from each module.
Module-I
a_ What are the types of Bonding forceses in solids? Explain. (06 Marks)
b. Explain the classification of material based on conductivity and energy band diagram.

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(08 Marks)
Find the conductivity of the intrinsic germanium at 300 K. If a donar type impurity is added
to the extent of I atom/10
7
germanium atom assume =3800, vi

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p
=1800 , n
;
= 2.5 x10
3

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,
Q = 1.602 x10
-19
(06 Marks)
OR

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2 a. What are Direct and Indirect band gap semiconductor? Explain with examples. (08 Marks)
b. Explain the concentration of electron-hole pair in Intrinsic semiconductor with energy band
diagram. (06 Marks)
c. Calculate the Intrinsic carrier concentration in Silicon at room temperature T = 300 K ,
where B is the material dependent parameter 5.4 x10

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31
and F:, as the bandgap energy
1.12 eV, where K is the Boltzrnan constant = 8.62 X10
-5
eV/K. (06 Marks)

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Module-2
3 a. With energy band diagram, explain the doping level in extrinsic semiconductor at 0 K and at
50 K. (09 Marks)
b. What is the magnitude of HALL voltage in a N-Type germanium bar having an majority
carrier concentration N

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I
, =10'
7
cm
3

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. Assume B = 0.2 Wb/m
2
, d = 2 mm, E = 10 V/cm.
(05 Marks)
c.

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Explain the effect of temperature on semiconductor. (06 Marks)
OR
4 a. Explain the qualitative description of current flow at P-N junction under equilibrium and
biased condition. (08 Marks)
b Explain zener breakdown and avalanche breakdown under reverse biased P-N junction.

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(06 Marks)
c.
Discuss the piece-wise linear approximations of junction diode under ideal condition.
(06 Marks)
Module-3

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5 a. Explain the optical generation of carrier in a P-N junction_ (08 Marks)
b. Discuss the configuration of a solar cell in enlarged view of the planar junction. (06 Marks)
c. What is injectiOn-electroluminiscence and what are its applications? (06 Marks)
1 of 2
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USN

18EC33

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--- Content provided by‍ FirstRanker.com ---

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--- Content provided by​ FirstRanker.com ---

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ri)
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tf)
?- a

--- Content provided by FirstRanker.com ---

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E
5
"
)

--- Content provided by​ FirstRanker.com ---

ra
C)
z
Third Semester B.E. Degree Examination, Dec:20

--- Content provided by⁠ FirstRanker.com ---

,
19-1Jan.2020
Electronic Devices
Time: 3 hrs. Max. Marks: 100
Note: ,

--- Content provided by‍ FirstRanker.com ---

,
Inswer FIFE full questions, choosing ONE full question from each module.
Module-I
a_ What are the types of Bonding forceses in solids? Explain. (06 Marks)
b. Explain the classification of material based on conductivity and energy band diagram.

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(08 Marks)
Find the conductivity of the intrinsic germanium at 300 K. If a donar type impurity is added
to the extent of I atom/10
7
germanium atom assume =3800, vi

--- Content provided by‌ FirstRanker.com ---

p
=1800 , n
;
= 2.5 x10
3

--- Content provided by​ FirstRanker.com ---

,
Q = 1.602 x10
-19
(06 Marks)
OR

--- Content provided by FirstRanker.com ---

2 a. What are Direct and Indirect band gap semiconductor? Explain with examples. (08 Marks)
b. Explain the concentration of electron-hole pair in Intrinsic semiconductor with energy band
diagram. (06 Marks)
c. Calculate the Intrinsic carrier concentration in Silicon at room temperature T = 300 K ,
where B is the material dependent parameter 5.4 x10

--- Content provided by‌ FirstRanker.com ---

31
and F:, as the bandgap energy
1.12 eV, where K is the Boltzrnan constant = 8.62 X10
-5
eV/K. (06 Marks)

--- Content provided by⁠ FirstRanker.com ---

Module-2
3 a. With energy band diagram, explain the doping level in extrinsic semiconductor at 0 K and at
50 K. (09 Marks)
b. What is the magnitude of HALL voltage in a N-Type germanium bar having an majority
carrier concentration N

--- Content provided by FirstRanker.com ---

I
, =10'
7
cm
3

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. Assume B = 0.2 Wb/m
2
, d = 2 mm, E = 10 V/cm.
(05 Marks)
c.

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Explain the effect of temperature on semiconductor. (06 Marks)
OR
4 a. Explain the qualitative description of current flow at P-N junction under equilibrium and
biased condition. (08 Marks)
b Explain zener breakdown and avalanche breakdown under reverse biased P-N junction.

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(06 Marks)
c.
Discuss the piece-wise linear approximations of junction diode under ideal condition.
(06 Marks)
Module-3

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5 a. Explain the optical generation of carrier in a P-N junction_ (08 Marks)
b. Discuss the configuration of a solar cell in enlarged view of the planar junction. (06 Marks)
c. What is injectiOn-electroluminiscence and what are its applications? (06 Marks)
1 of 2
18E

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(08 Marks)
(06 Marks)
6 a.
b.
OR

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Explain 1-V characteristics of n-p junction as a function
,
:of emitter current.
Discuss switching operation in common-emitter transistor.
c. Figure Q6 (c) shows the common emitter amplifier circuit. Calculate 1B and lc assume

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Tp = 1 0 pts , = 0.1 pi.s (06 Marks)
5
V
Fig. Qb (c)
Module-4

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7 a. DraW and explain the 1-V characteristics of n-channel PNJFET for different biasing
voltages. (07 Marks)
h. Draw and explain the small signal equivalent circuit of n-channel PNJFET. (07 Marks)
c. Explain the MOS structure with the aid of parallel-plate capacitor. (06 Marks)
OR

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8 a. Explain the effect of frequency on. gate voltage of a MOS capacitor with a P-type substrate.
(10 Marks)
b.
Explain P-channel enhancement and depletion type MOSFET with their circuit symbols.
(10 Marks)

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Module-5
9 a. . With schematic diagram, explain ION-implantation system. (07 Marks)
b. Explain low pressure chemical vapour deposition reactor. (07 Marks)
c. Discuss photolithography.
(06 Marks)

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OR
10 a. What are the different types of integrated circuits and its advantages? (10 Marks)
b. Explain the process of Integration. (10 Marks)
2 of 2
V

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