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Download JNTUA B.Tech 4-2 R15 2019 April Regular 15A04802 Low Power VLSI Circuits and Systems Question Paper

Download JNTUA (JNTU Anantapur) B.Tech R15 (Bachelor of Technology) 4th Year 2nd Semester 2019 April Regular 15A04802 Low Power VLSI Circuits and Systems Previous Question Paper || Download B-Tech 4th Year 2nd Sem 15A04802 Low Power VLSI Circuits and Systems Question Paper || JNTU Anantapur B.Tech 4-2 Previous Question Paper || JNTU Anantapur B.Tech ME 4-2 Previous Question Paper || JNTU Anantapur B.Tech CSE 4-2 Previous Question Paper || JNTU Anantapur B.Tech Mech 4-2 Previous Question Paper || JNTU Anantapur B.Tech EEE 4-2 Previous Question Paper || JNTU Anantapur B.Tech ECE 4-2 Previous Question Paper

This post was last modified on 10 September 2020

JNTU Anantapur B-Tech 4-2 last 10 year question papers 2010 -2020 -All regulation- All branches- 4th Year 2nd Sem


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Code: 15A04802

Time: 3 hours

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B.Tech IV Year II Semester (R15) Regular Examinations April 2019

LOW POWER VLSI CIRCUITS & SYSTEMS

(Electronics and Communication Engineering)

Max. Marks: 70

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PART - A

(Compulsory Question)

Answer the following: (10 X 02 = 20 Marks)

  1. (a) Define sub-threshold swing.
  2. (b) Define channel length modulation.
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  4. (c) What is meant by fringing field capacitance?
  5. (d) What are the disadvantages of resistive load inverter?
  6. (e) What are the drawbacks of parallelism approach?
  7. (f) What is the effect of feature scaling on power dissipation?
  8. (g) List out the methods to minimize switched capacitance.
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  10. (h) What is meant by molecule in Transmeta Crusoe processor?
  11. (i) Draw the AND gate using adiabatic logic.
  12. (j) How multiple threshold voltages can be achieved in a circuit?

PART - B

(Answer all five units, 5 X 10 = 50 Marks)

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UNIT - I

  1. (a) Explain the principles and challenges in low power design.
  2. (b) List different sources of dynamic and static power dissipation.

OR

Explain the structure and operation of NMOS transistor and derive expression for drain current.

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UNIT - II

  1. (a) Discuss delay parameters of MOS transistors.
  2. (b) Discuss in detail about the CMOS transmission gates.

OR

  1. (a) Explain in detail about switching power dissipation.
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  3. (b) Explain the operation of depletion load nMOS inverter and draw the VTC.

UNIT - III

Derive an expression for short circuit power dissipation of a CMOS inverter.

OR

Explain the optimization procedures for low power dissipation at algorithm and architecture level.

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UNIT - IV

Explain any three techniques that are used to reduce power at the logic level.

OR

Using Shannon's expansion principle, explain the pre-computation of adder-comparator circuit.

UNIT - V

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  1. (a) Explain variable threshold CMOS inverter circuit with a neat sketch.
  2. (b) What are the advantages and disadvantages of MTCMOS circuits?

OR

Explain the techniques used to minimize the software contribution to power dissipation.

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