Download AKTU B-Tech 6th Sem 2015-2016 NEC 603 Integrated Circuit Technology Question Paper

NEC-603

Paper ID: 131613

Roll No.

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B. TECH.

Theory Examination (Semester-VI) 2015-16

INTEGRATED CIRCUIT TECHNOLOGY

Time: 3 Hours

Max. Marks: 100

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Section-A

Q1. Attempt all parts. All parts carry equal marks. Write answer of each part in short. (2×10=20)

1. List the basic process for IC fabrication.
2. Explain the purpose of oxidation.
3. Compare proximity printing and projection printing.

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4. What are plasma deposition reactors? Why and how these are used?
5. What are the widely used materials for film deposition.
6. Explain photomask and photoresist.

Section-B

Attempt any five questions from this section. (10×5=50)

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1. (i) What is Fick's law of diffusion? Boron is diffused into an n-type single crystal substrate with doping conc. of 10¹⁵ atm/cm³. Assume diffusion function to be Gaussian, if diffusion time is 1hr, surface conc.=1×10¹⁸/cm³ and depth of junction is 2µm, determine diffusivity.
   (ii) Explain ion implantation and mention its advantages over diffusion.
2. Why oxidation is done? Explain the chemistry and kinetics of growth using Deal Groves Model.
3. (i) What is latch up? How latch up is avoided in CMOS technology?
   (ii) Describe "Dopant Profiles" in brief.

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4. Explain the different techniques of Dielectric film measurement.
5. Explain molecular beam epitaxy in detail. What are its advantages over VPE?
6. What are the effects of nesting tolerance on MOSFET layout? Discuss and describe with the help of suitable diagrams.
7. Discuss and describe the various process design considerations of VLSI devices.

Section-C

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Attempt any two questions. (2×15=30)

Q3. (a) What do you mean by Sputtering? Explain Sputtering Yield. Draw the schematic diagram of signal parallel-plate sputtering system and its working.

(b) Explain why refractory materials like tantalum are used for the deposition.

Q4. (a) Discuss diffusion. Find diffusion constants for:

1. Interstitial diffusion

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2. Substitutional diffusion

(b) Give reasons and explain why NPN transistors are preferred over PNP counterparts

Q5. Write short notes on following:

1. MOS IC fabrication technique
2. Czochralski Process

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3. CVD process

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