Download PTU (I.K.Gujral Punjab Technical University (IKGPTU)) B-Tech (Bachelor of Technology) (ECE)-Electronics And Communications Engineering 2020 December 3rd Sem 76444 Electronic Devices Previous Question Paper
Roll No.
Total No. of Pages : 02
Total No. of Questions : 18
B.Tech. (ECE) (2018 Batch) (Sem.?3)
ELECTRONIC DEVICES
Subject Code : BTEC-301-18
M.Code : 76444
Time : 3 Hrs. Max. Marks : 60
INST RUCT IONS T O CANDIDAT ES :
1 .
SECT ION-A is COMPULSORY cons is ting of TEN questions carrying TWO marks
each.
2 .
SECT ION-B c ontains F IVE questions c arrying FIVE marks eac h and s tud ents
have to atte mpt any FOUR q ues tions.
3 .
SECT ION-C contains THREE questions carrying T EN marks e ach and s tudents
have to atte mpt any T WO questio ns.
SECTION-A
Write briefly :
Q1.
Describe the behaviour of p-n junction diode under forward and reverse biased
conditions.
Q2.
Define the terms Knee voltage (VC) and Breakdown voltage (VB).
Q3.
Compare and contrast between P-N junction diode and Zener diode.
Q4.
Derive the relation between and with respect to BJT.
Q5.
Mention any two advantages of MOSFET over JFET.
Q6.
Give reasons why common emitter (CE) configuration is widely used in amplifier
circuits?
Q7.
What is reverse saturation current?
Q8.
What is ripple factor?
Q9.
In a bipolar transistor which region is wider and which region is thinner? Why?
Q10. How implant damage is repaired by annealing?
1 | M-76444
(S2)- 820
SECTION-B
Q11. Illustrate and explain the energy bands of gallium arsenide and silicon semiconductors.
Q12. What is P-N junction diode? How potential barrier is formed in a P-N junction diode?
Q13. What is the difference between centre-tapped full-wave rectifier and bridge full-wave
rectifier?
Q14. Draw Ebers-Moll model and hence explain transistor action.
Q15. What do you mean by oxidation process? Explain in detail. Also give characteristics of
different oxide films.
SECTION-C
Q16. In a CE configuration, the collector supply voltage is 10 V. When a resistor RC = 1 k is
connected in the collector circuit, the voltage drop across it is 0.5 V. For = 0.98,
determine the collector-emitter voltage and the base current.
Q17. Explain the operation of a tunnel diode. Draw its V-I characteristics and list the possible
applications of the device.
Q18. How doping is done using Ion implantation? Draw and explain the working of ion
implanter.
NOTE : Disclosure of Identity by writing Mobile No. or Making of passing request on any
page of Answer Sheet will lead to UMC against the Student.
2 | M-76444
(S2)- 820
This post was last modified on 13 February 2021