Download GTU (Gujarat Technological University) BE/BTech (Bachelor of Engineering / Bachelor of Technology) 2018 Winter 5th Sem Old 152401 Power Electronics Devices And Components Previous Question Paper
Seat No.: ________ Enrolment No.___________
GUJARAT TECHNOLOGICAL UNIVERSITY
BE - SEMESTER ?V (OLD) EXAMINATION ? WINTER 2018
Subject Code:152401 Date: 04/12/2018
Subject Name: Power Electronics Devices & Components
Time: 10:30 AM TO 01:00 PM Total Marks: 70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks
4. Notation/Symbols have used meaning.
Q.1 (a) Draw the symbol and V-I Characteristics of the following :
(i) LASCR (ii) GTO (iii) UJT (iv) TRIAC.
08
(b)
Fig.1
Analyze the working of the circuit shown in fig1.
06
Q.2 (a) State requirements for successful commutation. Explain class A commutation
method for thyristor.
07
(b) Discuss ideal switch characteristics. Enlist various types of losses in an electronic
switch
07
OR
(b) Discuss the various Turn-on methods for Thyristor.
Q.3 (a) Describe reverse recovery characteristics of a diode with necessary diagram(s). 07
(b) Sketch symbol and equivalent circuit of depletion type Power MOSFET. Describe
its operation in detail.
07
OR
Q.3 (a) Describe the principle of operation of a Shottky Diode. State its applications. 07
(b) Enlist various driving circuit used for Power BJT and discuss any one of them. 07
Q.4 (a) Write short note on:- (i) Opto-coupler (ii) PiN diode 07
(b) Explain cooling & mounting techniques for a power device in detail. 07
OR
Q.4 (a) Discuss switching characteristic of an IGBT. 07
(b) Enlist factors responsible for un-reliable operation of a thyristor. Discuss remedies
for any two of them.
07
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Seat No.: ________ Enrolment No.___________
GUJARAT TECHNOLOGICAL UNIVERSITY
BE - SEMESTER ?V (OLD) EXAMINATION ? WINTER 2018
Subject Code:152401 Date: 04/12/2018
Subject Name: Power Electronics Devices & Components
Time: 10:30 AM TO 01:00 PM Total Marks: 70
Instructions:
1. Attempt all questions.
2. Make suitable assumptions wherever necessary.
3. Figures to the right indicate full marks
4. Notation/Symbols have used meaning.
Q.1 (a) Draw the symbol and V-I Characteristics of the following :
(i) LASCR (ii) GTO (iii) UJT (iv) TRIAC.
08
(b)
Fig.1
Analyze the working of the circuit shown in fig1.
06
Q.2 (a) State requirements for successful commutation. Explain class A commutation
method for thyristor.
07
(b) Discuss ideal switch characteristics. Enlist various types of losses in an electronic
switch
07
OR
(b) Discuss the various Turn-on methods for Thyristor.
Q.3 (a) Describe reverse recovery characteristics of a diode with necessary diagram(s). 07
(b) Sketch symbol and equivalent circuit of depletion type Power MOSFET. Describe
its operation in detail.
07
OR
Q.3 (a) Describe the principle of operation of a Shottky Diode. State its applications. 07
(b) Enlist various driving circuit used for Power BJT and discuss any one of them. 07
Q.4 (a) Write short note on:- (i) Opto-coupler (ii) PiN diode 07
(b) Explain cooling & mounting techniques for a power device in detail. 07
OR
Q.4 (a) Discuss switching characteristic of an IGBT. 07
(b) Enlist factors responsible for un-reliable operation of a thyristor. Discuss remedies
for any two of them.
07
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Q.5 (a) Discuss parallel operation of two Power MOSFETs. 07
(b) Draw and explain two transistor model of an SCR. 07
OR
Q.5 (a) Write notes on: - ( i) SITH (ii) MCT. 07
(b) Compare Power MOSFET with SCR for various aspects. 07
*************
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This post was last modified on 20 February 2020