Download AKTU B-Tech 3rd Sem 2018-2019 Electronics Devices And Circuits Rec 302 Question Paper

Download AKTU (Dr. A.P.J. Abdul Kalam Technical University (AKTU), formerly Uttar Pradesh Technical University (UPTU) B-Tech 3rd Semester (Third Semester) 2018-2019 Electronics Devices And Circuits Rec 302 Question Paper

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BTech
(SEM 1H) THEORY EXAMINATION 2018-19
ELECTRONICS DEVICES AND CIRCUITS
Time: 3 Hours Total Mark: 70
Note: I. Attempt all Sections. If require any missing data; then choose suitably.
SECTION A
l. Attempt all questions in brief. 2 x 7 = 14
a) What type of semiconductor materialis suitable for luminescence effect?
b) What do you mean by diffusion of carriers?
c) In the linear region Operation of MOSFET drain Current decreases as the
temperature increases. Explain.
d) What is meant by threshold voltage?
6) What is a transistor? Expiain its types.
f) what do you mean by optoelectronic devices?
3) What is negative feedback and positive feedba?tk
SECTION g? V
2. Attempt any three of the following: 1 _ ? 7 x 3 f 214.,
a) Explain the principle of indirect recombination in band gap. Discuss its mechatiifs'm
b) What is a photodiode ? explain its Christruction and operation.
c) ExplaIn the oper ation and th?racterstics of N channel MOSFET
d] Explain transistor charact?tstics' In CE configuration. Explain the behaviour of the
transistor In active and cutoff mode
e) What IS an oscillatdr ? how does it differ from an amplifier ,1 ' '
SECTION C
3. Attempt any one part of the following: . 7 7 x I = 7
3) Explain the terms : solar cell , LED ?
b) Derive the expression for the forward and'reverse saturation current for P-N junction
diode
4. Attempt any one part of the following: 7 x 1 - 7
a) The energy distribution function pgis given by the product of two factors {pE=N(E).
f(En. What is the interpretation to be givento each of these factors?
b] B. What ?Is Einstein relation? Develop expressions to establish reiations betWeen
dn?fusion coefficient and mobility of carriers or obtain the relation: D/u =kT/q
5. Attempt any one part ofthe following: 7 x 1 = 7
a) Show that I: = '3 + alg + lcno .in whatway Ican depend on temperature?
b) Define a and B of a transistor and derive the relationship between them.
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?3?

a)
b)
Attempt any one part of the following: 7 x l = 7
Explain the terms: single stage MOS amplifier, MOSFET internal capacitances
Draw a biasing circuit of MOSFET ampti?er and expiain it.
Attempt any one part of the following: 7 x 1 = 7
draw the circuit diagram of LC oscillators? What is the condition of osciliation.
Explain the four types of feedback topologies with the help of schematic diagram.
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