Download AKTU B-Tech 6th Sem 2016-2017 NEC014 Advance Semiconductor Devices Question Paper

Download AKTU (Dr. A.P.J. Abdul Kalam Technical University (AKTU), formerly Uttar Pradesh Technical University (UPTU) B-Tech 6th Semester (Sixth Semester) 2016-2017 NEC014 Advance Semiconductor Devices Question Paper

Printed Pages:2 Roll No.| l l l l I l l l l l NEC014
B. TECH.
THEORY EXAMINATION (SEM?VI) 2016-17
ADVANCE SEMICONDUCTOR DEVICES
Time : 3 Hours Max. Marks : 100
Note : Be precise in your answer. In case Ofnumerical problem assume data wherever not provided.
SECTION-A
1 Attempt the following: (10x2=20)
a) Energy Bands and Energy Gap
b) Optical and Thermal Properties
c) Depletion Region
d) Single Electron Transistor
e) N onvolatile Memory Devices
f) Laser Operating Characteristics
g) Laser Physics
h) Phototransistor
i) Different types of Diodes
j ) N on?uniform Dopin g
SECTION-B
2 Attempt any five of the following: (10x5=50)
a) What is meant by IMPATT? Explain with neat and clean diagram the BRITT DIODE.
b) Explain the working of Tunnel diode. And also explain the backward diode.
c) Draw and explain the working principle of TRAPATT diode. Calculate the avalanche
zone velocity for a TRAPATT diode having N a= 1015/cm3 and current density J = 8k
Amp/cmz.
(1) Discuss the operation of SCR with latching and holding current in detail. Also discuss
the operation, application and symbol of tunnel and zener diode.
e) Discuss the Operation of N channel JFET with the condition of pinch?off. Deduce the
result of transconductance of this amplifier.
f) What is graded junction? Calculate the capacitance of graded junction after assuming
necessary and sufficient notation in accordance with yourself.
g) Find the maximum and normal conductivity of Si sample doped with N A& ND
impurities after assuming necessary and sufficient notation in accordance with yourself.
h) Explain n-type and p-type semiconductor with example. Define and derive the
expression for minority carrier life time.
SECTION-C
Attempt any two of the following: (15x2=30)
3. 3. Define mobility. Also write the mass action law. Prove the Einstein relationship.
b. Explain the working principle and ON/OFF operation of MESFET with characteristics.
0. Explain rectifying contact. Also write the features of ohmic contact.
4. a. Explain the working principle of photo detector. And also explain the solar cell with input
output characteristics.
b. Discuss the phenomenon of photoconductivity in detail with its examples and applications.

0. Discuss diffusion length, carrier life time and recombination.
Write a short note with suitable diagram:
3. Charge?Coupled Devices
b. Semiconductor laser
0. MODFETs